SLAC, Menlo Park, California, USA
University of Texas at Arlington, Arlington, USA
Self-seeding is a successful approach for generating high-brightness x-ray free electron laser (XFEL). A single-crystal monochromator in-between the undulator sections to generate a coherent seed is adopted in LCLS. However, for a high-repetition rate machine like LCLS-II, the crystal monochromator in current setup cannot sustain the high average power; hence a distributed self-seeding scheme utilizing multi-stages is necessary. Based on the criteria set on the crystal, the maximum allowed x-ray energy deposited in the crystal will determine the machine configuration for such a distributed self-seeding scheme. In this paper, a distributed self-seeding configuration is optimized for LCLS-II type projects in the hard x-ray FEL energy regime. The study is carried out based on numerical simulation.
SLAC, Menlo Park, California, USA
University of Texas at Arlington, Arlington, USA
When a laser pulse impinges on a thin crystal, energy is deposited resulting in an instantaneous temperature surge in the local volume and emission of stress waves. In the present work, we perform a transient thermal stress wave analysis of a diamond layer 200 μm thick in the low energy deposition per pulse regime. The layer thickness and laser spot size are comparable. The analysis reveals the characteristic non-planar stress wave propagation. The stress wave emission lasts by hundreds of nanoseconds, at a time scale relevant to the high-repetition-rate FELs at the megahertz range. The kinetic energy converted from the thermal strain energy is calculated, which may be important to estimate the vibrational amplitude of the thin crystal when excited under repeated heat loads. The transient heat transfer plays an important role in draining the mechanical energy during the dynamic wave emission process.
Virginia Polytechnic Institute and State University, Blacksburg, Virginia, USA
SLAC, Menlo Park, California, USA
POSTECH, Pohang, Kyungbuk, Republic of Korea
IHEP, Beijing, People's Republic of China
For a high-gain tapered free electron laser (FEL), it is known that there is a so-called second saturation point where the FEL power growth stops. Sideband instability is one of the major reasons leading to this second-saturation and thus prevents reaching terawatt-level power output in an X-ray FEL. It is believed that a strong taper can effectively suppress the sideband instability and further improve the efficiency and peak power. In this paper, we give quantitative analysis on the necessary taper gradient to minimize the sideband growth. We also discuss the transverse effects of induced electron de-trapping which is yet another major reason for the occurrence of the second-saturation point even with a strong enough taper. The study is carried out analytically together with numerical simulation. The numerical parameters are taken from LCLS-II type electron bunch and undulator system.
Virginia Polytechnic Institute and State University, Blacksburg, Virginia, USA
SLAC, Menlo Park, California, USA
POSTECH, Pohang, Kyungbuk, Republic of Korea
IHEP, Beijing, People's Republic of China
It is known that in a high-gain tapered free electron laser, there is the so-called second saturation point where the FEL power ceases to grow. Sideband instability is one of the major reasons causing this second saturation. Electron synchrotron oscillation coupling to the wideband SASE radiation leads to the appearance of sidebands in the FEL spectrum, and is believed to prevent a self-seeding tapered FEL from reaching very high peak power. A strong seed together with a fresh electron bunch or a fresh slice in conjunction with strong tapering of undulators can effectively suppress the sideband instability. In this paper, we give quantitative analysis on the necessary seed power as well as undulator tapering to minimize the sideband effects. The study is carried out semi-analytically together with numerical simulation. The machine and electron bunch parameters are chosen as those of PAL-XFEL and LCLS-II.
SLAC, Menlo Park, California, USA
ANL, Argonne, Illinois, USA
* MaRIE project: http://www.lanl.gov/science-innovation/science-facilities/marie/.
** K.-J. Kim, XFELO-Seeded Amplifier, talk on MaRIE workshop, 2016.
SLAC, Menlo Park, California, USA
LANL, Los Alamos, New Mexico, USA
High-brightness XFELs are demanding for many users, in particular for certain types of imaging applications. Self-seeding XFELs can respond to a heavily tapered undulator more effectively, therefore seeded tapered FELs are considered as a path to high-power FELs in the terawatts level. Due to many effects, including the synchrotron motion, the optimization of the taper profile is intrinsically multi-dimensional and computationally expensive. With an operating XFEL, such as LCLS, the on-line optimization becomes more economical than numerical simulation. Here we report recent on-line taper optimization on LCLS taking full advantages of nonlinear optimizers as well as up-to-date development of artificial intelligence: deep machine learning and neural networks.
NSRRC, Hsinchu, Taiwan
SLAC, Menlo Park, California, USA
IHEP, Beijing, People's Republic of China
USTC/NSRL, Hefei, Anhui, People's Republic of China
SLAC, Menlo Park, California, USA
Virginia Polytechnic Institute and State University, Blacksburg, Virginia, USA
University of Texas at Arlington, Arlington, USA
POSTECH, Pohang, Kyungbuk, Republic of Korea
Short-wavelength high-gain free-electron lasers (FELs) are now well established as a source of ultra-fast, ultra-brightness, longitudinally partial coherent light. Since coherence is one of the fundamental properties of light source, so continual effort is devoted to high-gain free-electron laser coherence measurements. In this work, we propose a possible approach, employing a phase shifter to induce electron beam delay to measure the temporal coherence length. Simple analysis, numerical simulation and preliminary experimental results are presented. This approach can be robust and independent of frequency.
SLAC, Menlo Park, California, USA
PAL, Pohang, Republic of Korea
University of Texas at Arlington, Arlington, USA
High-brightness XFEL is demanding for many users, in particular for certain types of imaging applications. Seeded FELs including self-seeding XFELs were successfully demonstrated. Alternative approaches by enhancing slippage between the x-ray pulse and the electron bunch were also demonstrated. This class of Slippage-enhanced SASE (SeSASE) schemes can be unique for FEL spectral range between 1.5 keV to 4 keV where neither grating-based soft x-ray self-seeding nor crystal-based hard x-ray self-seeding can easily access. SeSASE can provide high-brightness XFEL for high repetition rate machines not suffering from heat load on the crystal monochromator. We report start-to-end simulation results for LCLS-II project and PAL-XFEL project with study on tolerance. Performance comparison between SaSASE FEL and self-seeding FEL in the overlapping frequency range is also presented.
IHEP, Beijing, People's Republic of China
SLAC, Menlo Park, California, USA
Recent study shows that electron beams with constant dispersion together with the transverse-gradient undulator (TGU) can reduce the sensitivity to energy spread for free-electron laser (FEL). By inducing dispersion function, electrons with different energy are placed at different positions corresponding to proper magnetic fields. Thus, FEL resonant condition can be kept for electrons with different energy. In this paper, we mainly studied: 1.The effects of electron beam angle deflection at the entrance of the TGU on the radiation power. 2. The utility of a kicker to introduce an angle deflection of electron beam to improve the FEL radiation power.
SLAC, Menlo Park, California, USA
University of Texas at Arlington, Arlington, USA
Thin crystals are used in many important optical elements, such as monochromator and spectrometer, in XFELs. To function properly, they must survive the ever-increasing heat load under repeated pulses. Here, we conduct a thermal stress analysis to examine the crystal lattice distortion due to the thermal load under various rep rates from 0.1 to 1 MHz. The thermal field is obtained by solving the transient heat transfer equations. The temperature-dependent material properties are used. It is shown that for pulse adsorption energy around tens of microjoule over a spot size of 10 micrometer, the thermal response of diamond is sensitive to rep rate. The thermal strain components are very different in the in- and out-of-plane directions, due to different constraint conditions. It suggests complicated strain effects in the Bragg and Laue diffraction cases.