Keyword: alignment
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MOP028 Field Integral Measurement System and Optical Alignment System for HUST THz-FEL undulator, FEL, electron, cavity 80
 
  • B. Qin, Q.S. Chen, M. Fan, Q. Fu, T. Hu, X. Lei, K.F. Liu, X. Liu, P. Tan, Y.Q. Xiong, J. Yang, L. Yang
    HUST, Wuhan, People's Republic of China
  • X. Liu, Z. Ouyang, Y.B. Wang
    Huazhong University of Science and Technology, State Key Laboratory of Advanced Electromagnetic Engineering and Technology,, Hubei, People's Republic of China
  • Y.J. Pei
    USTC/NSRL, Hefei, Anhui, People's Republic of China
 
  A Free Electron Laser oscillator with radiation wavelength 50–100 μm is under construction in Huazhong University of Science and Technology (HUST). The linear polarization undulator with K=1.0-1.25 has been designed and manufactured by Kyma s.r.l., by using a pure permanent magnet scheme. Acceptance test bas been performed in Kyma factory with well controlled phase error and field integrals for all gaps. This paper introduces the development of an online field integrals measurement system for the undulator, using the stretched wire method. The design and considerations of the optical alignment system is described as well.  
 
MOP040 General Strategy for the Commissioning of the ARAMIS Undulators with a 3 GeV Electron Beam undulator, electron, quadrupole, photon 107
 
  • M. Calvi, M. Aiba, M. Brügger, S. Danner, R. Ganter, R. Ischebeck, L. Patthey, T. Schietinger, T. Schmidt
    PSI, Villigen PSI, Switzerland
 
  The commissioning of the first SwissFEL undulator line (Aramis) is planned for the beginning of 2017. Each undulator is equipped with a 5-axis camshaft system to remotely adjust its position in the micrometer range and a gap drive system to set K-values between 0.1 and 1.8. In the following paper the beam-based alignment of the undulator with respect to the golden orbit, the definition of look-up tables for the local correction strategy (minimization of undulator field errors), the fine-tuning of the K-values as well as the setting of the phase shifters are addressed. When applicable both electron beam and light based methods are presented and compared.  
 
MOP043 Magnetic Design of an Apple III Undulator for SwissFEL undulator, vacuum, polarization, operation 116
 
  • T. Schmidt, A. Anghel, P. Boehler, M. Brügger, M. Calvi, S. Danner, P. Huber, A. Keller, M. Locher
    PSI, Villigen PSI, Switzerland
 
  In the frame of the SwissFEL project a soft x-ray line is planned in the coming years to cover the wavelength between 0.7 and 7.0nm. Based on the good experience at the SLS storage ring with Apple undulator as source of variable polarized light, Apple III type undulators are also foreseen at the SwissFEL. In this paper the design of these devices is introduced and the preliminary magnetic configuration together with the optimization strategy is presented in details.  
 
MOP047 A 200 μm-period Laser-driven Undulator undulator, laser, electron, plasma 131
 
  • F. Toufexis, T. Tang, S.G. Tantawi
    SLAC, Menlo Park, California, USA
 
  Funding: This project was funded by U.S. Department of Energy under Contract No. DE-AC02-76SF00515 and the DARPA AXiS program.
To reduce the linac energy required for a given synchrotron radiation wavelength, and hence the size of the device, a smaller undulator period with sufficient field strength is needed. In this work, a microfabricated, laser-driven undulator with 200um undulator period is proposed. A TE wave that co-propagates with the electron beam is excited between two polysilicon thin films, having a gap of 16.5um. The mode that is excited is a deflecting mode and causes the electron beam to wiggle. The device is fabricated on a silicon wafer, using conventional silicon micromachining techniques. A single polysilicon thin film is supported on a silicon chip, which has a slit from the back to allow delivery of the laser beam. Two such chips are bonded together to form a 16.5um gap, within which the electron beam passes through. The final device has dimensions 1cm x 1cm x 1.1mm and has approximately 35 undulator periods. In this paper, the model, design, fabrication, and cold measurements of the device are reported.
 
 
THP012 Error Analysis for Linac Lattice of Hard X-ray FEL Line in PAL-XFEL* emittance, linac, simulation, lattice 703
 
  • H. Yang, J.H. Han, H.-S. Kang, I.S. Ko
    PAL, Pohang, Kyungbuk, Republic of Korea
 
  Funding: *This work was supported by MSIP, Korea.
PAL-XFEL consists of the hard x-ray line for 0.06 – 1-nm FEL and the soft x-ray line for 1 – 10-nm FEL. The linac of hard x-ray line is designed to generate 10-GeV, 200-pC, and 3-kA electron beam. It consists of S-band accelerating columns, an X-band linearizer, three bunch compressors (BC). We conduct error simulation in order to evaluate the tolerances of machine parameters and alignments. First, the machine tolerances and beam jitter levels are calculated in the simulations with dynamic errors and we find out the optimized lattice to satisfy the target tolerance of machine. Second, we conduct simulations with misalignment. We quantify the emittance dilution by misalignments, especially those of BCs. In order to compensate the misalignments, the methods of beam correction like Beam Based Alignment (BBA) are presented and the effects of emittance improvements are calculated.
 
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