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TUOBM07 |
Newly Developed Wavefront Metrology Technique and Applying in Crystal Processing |
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- F. Liu, Q.S. Diao, Z. Hong, M. Li, H. Lian, J.L. Yang
IHEP, People’s Republic of China
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In this work, we firstly propose an innovative wavefront metrology method at Beijing Synchrotron Radiation Facility (BSRF), named the double edges scan (DES) wavefront metrology technique. As the method resolved several vital problems of the first-generation synchrotron radiation source, including inferior lateral coherence, poor stability, and distortion of incident wavefront, it realized diffraction limit level wavefront metrology and has been successfully applied to crystal processing, which regarded as an important feedback of the fourth-generation synchrotron radiation source crystal fabrication process. The DES can achieve the precision better than 22.5 nrad (rms) with a 50 microns lateral resolution on crystal surface. The crystal we measured was processed by magnetically controlled small tool, which is also a creative processing technic. The technique gets rid of the limitation of the power system and transmission system, and realized the free machining of channel-cut crystal with narrow space.
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Slides TUOBM07 [4.007 MB]
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WEPPP014 |
Research on High Quality Channel-Cut Crystal Optics for High Energy Photon Source |
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- Z. Hong, Q.S. Diao, M. Li, H. Lian
IHEP, People’s Republic of China
- M. Li
University of Chinese Academy of Sciences, Beijing, People’s Republic of China
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Funding: 1 National Natural Science Foundation of China (NSFC; Proposal No. 12105310). 2 The High Energy Photon Source project, a major national science and technology infrastructure in China.
In this paper, a machining scheme of magnetically controlled small tool was proposed, which gets rid of the limitation of the power system and transmission system, and realized the free machining of channel-cut crystal with narrow space, a high quality channel-cut crystal with high wavefront maintenance and high transmission efficiency in a large size range was obtained. The results of offline characterization showed that: The roughness of inner surfaces reached 0.6nm RMS; Microstructure analysis show that the perfect lattice substrate was only covered 2.5nm thickness uniform SiO₂ layer, and there was no uneven bending of the oxide layer caused byμstress concentration. The results of online tests showed that: the Darwin widths of the channel-cut crystal processed by MC-CMP were consistent with the theoretical values, the two diffraction reflectivity rate of the crystal reached 85.1%, very close to the theoretical limit of 88.3%. The morphology of channel-cut crystal treated by MC-CMP technology was uniform, scratches and spot defects were eliminated completely. The wavefront equivalent crystal profile error of the two diffraction reached 130nrad RMS with 5 mm dimension.
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WEPPP048 |
The Fabrication of Bonding Channel-Cut Monochromatic Crystal |
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- Q.S. Diao, Z. Hong, H. Lian
IHEP, People’s Republic of China
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Crystal monochromator is one of the core optical components of X-ray transmission, and its internal residual stress and surface roughness directly affect the quality of X-ray. With the development of synchrotron radiation sources, better uniformity and stability of X-ray beams are required. The beam intensity and position stability of conventional double crystal monochromator is affected by clamping and cooling mechanism. Although channel-cutl monochromator can meet the requirements of X-ray stability, but the polishing of the inside diffraction surface is a really challenge. It is difficult to promote implementation because the only guiding principle of empirical and lack of scientific data support system. So it is imperative to develop crystal monochromator with good beam quality and high stability. This project intends to combine the crystal polishing technology and optical surface shape measuring instrument to carry out research on micro-radian level high-precision crystal orientation and massive crystal silicon bonding technology, and complete a group of stress-free plane crystals with ultra-high surface shape accuracy within 1 ¿rad orientation error.
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