Keyword: ECRIS
Paper Title Other Keywords Page
TUPRC032 An Analysis of Fast Sputtering Studies for Ion Confinement Time ion, plasma, electron, ion-source 475
 
  • D.E. Neben, G. Machicoane, A.N. Pham, J.W. Stetson
    NSCL, East Lansing, Michigan, USA
  • G. Machicoane
    FRIB, East Lansing, USA
  • G. Parsey
    MSU, East Lansing, Michigan, USA
  • J.P. Verboncoeur
    Michigan State University, East Lansing, Michigan, USA
 
  Funding: This work was supported by Michigan State University and the National Science Foundation: NSF Award Number PHY-1415462
Existing heavy ion facilities such as the National Superconducting Cyclotron Laboratory at Michigan State University rely on Electron Cyclotron Resonance (ECR) ion sources as injectors of highly charged ion beams. Long ion confinement times are necessary to produce dense populations of highly charged ions because of steadily decreasing ionization cross sections with increasing charge state. To further understand ion extraction and confinement we are using a fast sputtering technique first developed at Argonne National Laboratory (ANL) [1] to introduce a small amount of uranium metal into the plasma at a well-defined time. We present an analytical solution to the coupled ion density rate equations for using a piecewise constant neutral density to interpret the fast sputtering method.
*R. Vondrasek et al., Rev. Sci. Instrum. 73, 548-551 (2002).
 
poster icon Poster TUPRC032 [0.699 MB]  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-LINAC2016-TUPRC032  
Export • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)  
 
FR1A03 Intense Beam Production of Highly Charged Ions by the Superconducting ECR Ion Source SECRAL for Heavy Ion Linacs ion, ion-source, ECR, linac 1027
 
  • L.T. Sun, X. Fang, Y.C. Feng, J.W. Guo, W. Lu, L.Z. Ma, C. Qian, Z. Shen, W. Wu, Y. Yang, W.H. Zhang, X.Z. Zhang, H.W. Zhao, L. Zhu
    IMP/CAS, Lanzhou, People's Republic of China
 
  Superconducting ECR ion source (SC-ECRIS) represents the state of the art technologies of ECR ion sources. Existing SC-ECRISs developed in different labs have contributed significantly for ECRIS technology advancement in the last 15 years. Recently the superconducting ECR ion source SECRAL operated at 24 GHz at IMP has produced many new world recorded beam intensities of highly charged ions due to new technologies applied, such as a new microwave coupling scheme. At the meantime, the world first 4th generation ECR ion source operated at 45 GHz is being developed at IMP. All these developments on intense beam production of highly charged ions with superconducting ECR ion source may play significant roles for the next generation heavy ion linacs such as FRIB and Linac of HIAF project. This paper will report the recent developments of intense highly charged heavy ion beams at IMP and the discussion on perspectives of next generation ECRIS for the future heavy ion liancs.  
slides icon Slides FR1A03 [13.557 MB]  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-LINAC2016-FR1A03  
Export • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)