IPAC2021 - Classification: MC8: Applications of Accelerators, Technology Transfer, Industrial Relations and Outreach / U02 Materials Analysis and Modification

Paper	Title	Page
TUPAB057	Carbon Beam at I-3 Injector for Semiconductor Implantation	1489
	A.A. Losev, P.N. Alekseev, N.N. Alexeev, T. Kulevoy, A.D. Milyachenko, Yu.A. Satov, A. Shumshurov ITEP, Moscow, Russia P.B. Lagov NUST MISIS, Moscow, Russia M.E. Letovaltseva MIREA, Moscow, Russia Y.S. Pavlov IPCE RAS, Moscow, Russia
	Carbon implantation can be effectively used for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures. When carbon is implanted, more stable recombination centers are formed and silicon is not doped with additional impurities, as for example, when irradiated with protons or helium ions. Economically, such a process competes with alternative methods, and is more efficient for obtaining small lifetimes (several nanoseconds). I-3 ion injector with laser-plasma ion source in Institute for theoretical and experimental physics (ITEP) is used as ion implanter in semiconductors. The ion source uses pulsed CO₂ laser setup with radiation-flux density of 10¹¹ W/cm² at target surface. The ion source produces beams of various ions from solid targets. The generated ion beam is accelerated in the two gap RF resonator at voltage of up to 2 MV per gap. Resulting beam energy is up to 4 MV per charge. Parameters of carbon ion beam generated and used for semiconductor samples irradiation during experiments for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures are presented.
	Poster TUPAB057 [0.630 MB]
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB057
About •	paper received ※ 15 May 2021 paper accepted ※ 28 May 2021 issue date ※ 01 September 2021
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TUPAB410	Finite Element Analysis and Experimental Validation of Low-Pressure Beam Windows for XCET Detectors at CERN	2487
	J. Buesa Orgaz, M. Brugger, G. Romagnoli, O. Sacristan De Frutos, F. Sanchez Galan CERN, Meyrin, Switzerland
	In the framework of the renovation and consolidation of experimental areas at CERN, a low-pressure design beam superimposed windows (250 µm Mylar and 150 µm polyethylene) for the Threshold Cherenkov counters (XCET) has been modelled and verified for its implementation. The XCET is a detector used to count the number of selected charged particles in the beam by adjusting the pressure that leads to the emission of Cherenkov photons only above certain pressure threshold. Simultaneously, the charged particles pass from a vacuum environment to the pressurized refractive gas vessel through a solid interface. Minimal material in this solid interface is therefore crucial to avoid interactions of the low-energy particles which may lead to beam intensity loss or background production. Hence, thin and low-density materials are required to mitigate multiple scattering and energy loss of the incoming particles while still allowing the needed pressures inside the counter vessel. A XCET validation methodology was conducted using Finite Element Analysis (FEA), followed by experimental validations performing burst pressure tests and using Digital Image Correlation (DIC).
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB410
About •	paper received ※ 19 May 2021 paper accepted ※ 02 June 2021 issue date ※ 24 August 2021
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

WEPAB328	Rapid Surface Microanalysis Using a Low Temperature Plasma	3440
	V.G. Dudnikov, M.A. Cummings, R.P. Johnson Muons, Inc, Illinois, USA
	There is a need for rapid, high-resolution (micron or sub-micron) scanning of surfaces of special nuclear materials (SNM) and surrogate materials to locate and identify regions of abnormalities. One technique that is commonly used to analyze the composition of solid surfaces and thin films is secondary-ion mass spectrometry (SIMS). SIMS devices are very complex and expensive. We propose to develop simpler, less expensive surface analysis devices, based on glow-discharge optical emission spectroscopy (GOES) that can provide excellent spatial resolution. Ions from a plasma discharge sputtered atoms from the surface and the discharge electrons effectively excite and ionize the sputtered atoms. GOES uses the light emitted by the excited particles for quantitative analysis. In the GOES device, the ion flux is extracted from the gas-discharge plasma and focused to a micron size on the sample, providing very local sputtering and local elemental analysis. The radiation from the sputtered atoms is passed through an optical fiber to an optical spectrometer and recorded. To register the distribution of elements over the sample, the sample is scanned electro-mechanically.
	Poster WEPAB328 [0.385 MB]
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-WEPAB328
About •	paper received ※ 19 May 2021 paper accepted ※ 29 July 2021 issue date ※ 02 September 2021
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Carbon Beam at I-3 Injector for Semiconductor Implantation

1489

A.A. Losev, P.N. Alekseev, N.N. Alexeev, T. Kulevoy, A.D. Milyachenko, Yu.A. Satov, A. Shumshurov
ITEP, Moscow, Russia
P.B. Lagov
NUST MISIS, Moscow, Russia
M.E. Letovaltseva
MIREA, Moscow, Russia
Y.S. Pavlov
IPCE RAS, Moscow, Russia

Carbon implantation can be effectively used for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures. When carbon is implanted, more stable recombination centers are formed and silicon is not doped with additional impurities, as for example, when irradiated with protons or helium ions. Economically, such a process competes with alternative methods, and is more efficient for obtaining small lifetimes (several nanoseconds). I-3 ion injector with laser-plasma ion source in Institute for theoretical and experimental physics (ITEP) is used as ion implanter in semiconductors. The ion source uses pulsed CO₂ laser setup with radiation-flux density of 10¹¹ W/cm² at target surface. The ion source produces beams of various ions from solid targets. The generated ion beam is accelerated in the two gap RF resonator at voltage of up to 2 MV per gap. Resulting beam energy is up to 4 MV per charge. Parameters of carbon ion beam generated and used for semiconductor samples irradiation during experiments for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures are presented.

Poster TUPAB057 [0.630 MB]

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB057

About •

paper received ※ 15 May 2021 paper accepted ※ 28 May 2021 issue date ※ 01 September 2021

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

TUPAB410

Finite Element Analysis and Experimental Validation of Low-Pressure Beam Windows for XCET Detectors at CERN

2487

J. Buesa Orgaz, M. Brugger, G. Romagnoli, O. Sacristan De Frutos, F. Sanchez Galan
CERN, Meyrin, Switzerland

In the framework of the renovation and consolidation of experimental areas at CERN, a low-pressure design beam superimposed windows (250 µm Mylar and 150 µm polyethylene) for the Threshold Cherenkov counters (XCET) has been modelled and verified for its implementation. The XCET is a detector used to count the number of selected charged particles in the beam by adjusting the pressure that leads to the emission of Cherenkov photons only above certain pressure threshold. Simultaneously, the charged particles pass from a vacuum environment to the pressurized refractive gas vessel through a solid interface. Minimal material in this solid interface is therefore crucial to avoid interactions of the low-energy particles which may lead to beam intensity loss or background production. Hence, thin and low-density materials are required to mitigate multiple scattering and energy loss of the incoming particles while still allowing the needed pressures inside the counter vessel. A XCET validation methodology was conducted using Finite Element Analysis (FEA), followed by experimental validations performing burst pressure tests and using Digital Image Correlation (DIC).

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB410

About •

paper received ※ 19 May 2021 paper accepted ※ 02 June 2021 issue date ※ 24 August 2021

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

WEPAB328

Rapid Surface Microanalysis Using a Low Temperature Plasma

3440

V.G. Dudnikov, M.A. Cummings, R.P. Johnson
Muons, Inc, Illinois, USA

There is a need for rapid, high-resolution (micron or sub-micron) scanning of surfaces of special nuclear materials (SNM) and surrogate materials to locate and identify regions of abnormalities. One technique that is commonly used to analyze the composition of solid surfaces and thin films is secondary-ion mass spectrometry (SIMS). SIMS devices are very complex and expensive. We propose to develop simpler, less expensive surface analysis devices, based on glow-discharge optical emission spectroscopy (GOES) that can provide excellent spatial resolution. Ions from a plasma discharge sputtered atoms from the surface and the discharge electrons effectively excite and ionize the sputtered atoms. GOES uses the light emitted by the excited particles for quantitative analysis. In the GOES device, the ion flux is extracted from the gas-discharge plasma and focused to a micron size on the sample, providing very local sputtering and local elemental analysis. The radiation from the sputtered atoms is passed through an optical fiber to an optical spectrometer and recorded. To register the distribution of elements over the sample, the sample is scanned electro-mechanically.

Poster WEPAB328 [0.385 MB]

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-WEPAB328

About •

paper received ※ 19 May 2021 paper accepted ※ 29 July 2021 issue date ※ 02 September 2021

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)