Author: Nakamura, N.
Paper Title Page
TUIBCC002
EUV ERLs for Semiconductor Integrated Circuit Lithography  
 
  • N. Nakamura
    KEK, Ibaraki, Japan
 
  Although the technologies on EUV Lithography are progressing based on laser-produced plasma (LPP) source, which is expected to produce the EUV power of 250 W or more, it is important to develop a new-type EUV source to meet future demand for higher power than 1 kW. Energy recovery linac(ERL) based free electron lasers(FEL) are possible candidates of a high-power EUV source that can distribute 1 kW class power to multiple scanners simultaneously. In order to demonstrate the feasibility of EUV ERLs for lithography, an EUV source based on an 800 MeV ERL operating at the wavelength of 13.5 nm has been designed using available technologies without too much development and resources of the KEK cERL. In addition, the EUV-FEL Light Source Study Group for Industrialization has been established in Japan to realize industrialization of such an ERL-EUV source and the related items. We will present recent progress of the EUV-ERL design work and some activities and considerations for the industrialization.  
slides icon Slides TUIBCC002 [21.878 MB]  
Export • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)  
 
THICCC001
Beam Halo Study at the KEK Compact ERL  
 
  • O. Tanaka, T. Miyajima, N. Nakamura, M. Shimada
    KEK, Ibaraki, Japan
  • T. Hotei
    Sokendai, Ibaraki, Japan
  • K. Osaki
    Toshiba, Tokyo, Japan
 
  Funding: Work supported by the Grant-in-Aid for Creative Scientific Research of JSPS (KAKENHI 15K04747).
The beam halo control is of a great importance to attain high intensity beams. Thus, its detailed treatment is indispensable for the stable and safe operation. A systematic beam halo study was established at the KEK Compact ERL (cERL) since machine commissioning in spring 2015 in order to understand the beam halo formation and to have the stable and safe operation. The results of halo simulations have given a reasonable explanation of the low bunch charge (0.2-0.3 pC) beam profiles evaluated during the measurement. Thus, vertical beam halos observed at cERL are supposed to be due to the longitudinal bunch tails transferred into the transverse plane. Tails are mainly produced by the cathode response on the laser excitation. Further, when a beam passing the rf cavity off-center it experiences rf field kicks. The beam tilt could be a complex effect of the steering coils and cavities misalignments. During spring 2017 commissioning the bunch charge was increased up to 40 pC. In present study we are challenging to describe how the space charge effect acts on the beam halo profiles, and how the halo formation mechanisms change in this connection.
 
slides icon Slides THICCC001 [5.540 MB]  
Export • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)