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TY - UNPB AU - Nakamura, N. ED - Ramberger, Suitbert ED - Draper, Mick ED - Schaa, Volker RW TI - EUV ERLs for Semiconductor Integrated Circuit Lithography J2 - Proc. of ERL2017, Geneva, Switzerland, June 18-23, 2017 C1 - Geneva, Switzerland T2 - ICFA Advanced Beam Dynamics Workshop T3 - 59 LA - english AB - Although the technologies on EUV Lithography are progressing based on laser-produced plasma (LPP) source, which is expected to produce the EUV power of 250 W or more, it is important to develop a new-type EUV source to meet future demand for higher power than 1 kW. Energy recovery linac(ERL) based free electron lasers(FEL) are possible candidates of a high-power EUV source that can distribute 1 kW class power to multiple scanners simultaneously. In order to demonstrate the feasibility of EUV ERLs for lithography, an EUV source based on an 800 MeV ERL operating at the wavelength of 13.5 nm has been designed using available technologies without too much development and resources of the KEK cERL. In addition, the EUV-FEL Light Source Study Group for Industrialization has been established in Japan to realize industrialization of such an ERL-EUV source and the related items. We will present recent progress of the EUV-ERL design work and some activities and considerations for the industrialization. PB - JACoW Publishing CP - Geneva, Switzerland ER -