Paper | Title | Page |
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TUOBM05 | The Progress in Design, Preparation and Measurement of MLL for HEPS | 24 |
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Funding: This work was supported by the National Natural Science Foundation of China (Project12005250¿ The multilayer Laue lens (MLL) is a promising optical element with large numerical aperture and aspect ratio in synchrotron radiation facility. Two multilayers with 63(v)×43(h) ¿m2 aperture and focal spot size of 8.1(v)×8.1(h)nm2 at 10keV are fabricated by a 7-meter-long Laue lens deposition machine. Ultrafast laser etching, dicing and FIB are used to fabricate the multilayer into two-dimensional lenses meeting the requirement of diffraction dynamics. The multilayer grows flat without distortion and shows an amorphous structure characterized by TEM and SAED. The smallest accumulated layer position error is below ±5 nm in the whole area and the rms error is about 2.91nm by SEM and image processing. The focusing performance of MLL with actual film thickness is calculated by a method based on the Takagi¿Taupin description (TTD). The full width at half maximum(FWHM) of focus spot is 8.2×8.4 nm2 which is close to the theoretical result. |
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Slides TUOBM05 [7.563 MB] | ||
DOI • | reference for this paper ※ doi:10.18429/JACoW-MEDSI2023-TUOBM05 | |
About • | Received ※ 24 October 2023 — Revised ※ 03 November 2023 — Accepted ※ 09 November 2023 — Issued ※ 18 May 2024 | |
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WEPPP019 | Coating Removal of Silicon-Based Mirror in Synchrotron Radiation by Soluble Underlayers | 181 |
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Multilayer optics is widely used for the x-ray beam monochromatization, focusing, and collimation in synchrotron light source. However, the multilayer coatings might be damaged by the high heat loads, the poor film adhesion, the high internal stress, or the inadequate vacuum conditions. As a result, it is essential to develop a method to make the optical substrate reusable without compromising its quality. In our published work, we successfully prepared a W/B4C multilayer coating with a 2 nm Cr buffer layer on a small-sized Si wafer. The coating was stripped from the Si substrate by dissolving the Cr buffer layer using an etchant. After the etching process, the sample’s roughness was comparable to that of a brand-new substrate. We have since utilized this method to clean the multilayers on the surface of a 20 cm × 5 cm silicon-based mirror for High Energy Photon Source (HEPS). The surface roughness and shape were measured, and they reached the level of a brand-new mirror. | ||
DOI • | reference for this paper ※ doi:10.18429/JACoW-MEDSI2023-WEPPP019 | |
About • | Received ※ 02 November 2023 — Revised ※ 04 November 2023 — Accepted ※ 06 November 2023 — Issued ※ 19 December 2023 | |
Cite • | reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml) | |