IPAC2021 - List of Authors (Vogel, M.)

Paper	Title	Page
WEPAB109	Initial Study of GaN Thin Films for Photocathodes Prepared by Magnetron Sputtering on Copper Substrates	2850
	M. Vogel, X. Jiang, C. Wang University Siegen, Siegen, Germany P. Murcek, J. Schaber, R. Xiang HZDR, Dresden, Germany
	Funding: This research is funded by the Federal Ministry of Education and Research of Germany in the framework of BETH (project number 05K19PSB). On the path for high brightness electron beams, Gallium Nitride (GaN) is one promising candidate for a photo-cathode material. In this contribution, we report on the continuation of the study to optimize the crystallization quality and crystallography of Mg-doped GaN samples on copper substrates that are synthesized by RF magnetron sputtering. SEM and XRD results show that the pretreatment methods and the sputtering conditions (temperature, sputtering power, and partial pressure of the reactive gas) can both affect the morphology and crystal quality of GaN films. The initial QE measurements of these samples are done in our newly build in-situ QE measurement system and the first results of QE analyses done at Helmholtz-Zentrum Dresden-Rossendorf (HZDR) are presented in a dedicated contribution. Part of this work was performed at the Micro- and Nanoanalytics Facility (MNaF) of the University of Siegen.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-WEPAB109
About •	paper received ※ 19 May 2021 paper accepted ※ 09 June 2021 issue date ※ 27 August 2021
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Initial Study of GaN Thin Films for Photocathodes Prepared by Magnetron Sputtering on Copper Substrates

2850

M. Vogel, X. Jiang, C. Wang
University Siegen, Siegen, Germany
P. Murcek, J. Schaber, R. Xiang
HZDR, Dresden, Germany

Funding: This research is funded by the Federal Ministry of Education and Research of Germany in the framework of BETH (project number 05K19PSB).
On the path for high brightness electron beams, Gallium Nitride (GaN) is one promising candidate for a photo-cathode material. In this contribution, we report on the continuation of the study to optimize the crystallization quality and crystallography of Mg-doped GaN samples on copper substrates that are synthesized by RF magnetron sputtering. SEM and XRD results show that the pretreatment methods and the sputtering conditions (temperature, sputtering power, and partial pressure of the reactive gas) can both affect the morphology and crystal quality of GaN films. The initial QE measurements of these samples are done in our newly build in-situ QE measurement system and the first results of QE analyses done at Helmholtz-Zentrum Dresden-Rossendorf (HZDR) are presented in a dedicated contribution.
Part of this work was performed at the Micro- and Nanoanalytics Facility (MNaF) of the University of Siegen.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-WEPAB109

About •

paper received ※ 19 May 2021 paper accepted ※ 09 June 2021 issue date ※ 27 August 2021

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)