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@inproceedings{vogel:ipac2021-wepab109,
author = {M. Vogel and X. Jiang and P. Murcek and J. Schaber and C. Wang and R. Xiang},
title = {{Initial Study of GaN Thin Films for Photocathodes Prepared by Magnetron Sputtering on Copper Substrates}},
booktitle = {Proc. IPAC'21},
pages = {2850--2852},
eid = {WEPAB109},
language = {english},
keywords = {cathode, electron, plasma, gun, experiment},
venue = {Campinas, SP, Brazil},
series = {International Particle Accelerator Conference},
number = {12},
publisher = {JACoW Publishing, Geneva, Switzerland},
month = {08},
year = {2021},
issn = {2673-5490},
isbn = {978-3-95450-214-1},
doi = {10.18429/JACoW-IPAC2021-WEPAB109},
url = {https://jacow.org/ipac2021/papers/wepab109.pdf},
note = {https://doi.org/10.18429/JACoW-IPAC2021-WEPAB109},
abstract = {{On the path for high brightness electron beams, Gallium Nitride (GaN) is one promising candidate for a photo-cathode material. In this contribution, we report on the continuation of the study to optimize the crystallization quality and crystallography of Mg-doped GaN samples on copper substrates that are synthesized by RF magnetron sputtering. SEM and XRD results show that the pretreatment methods and the sputtering conditions (temperature, sputtering power, and partial pressure of the reactive gas) can both affect the morphology and crystal quality of GaN films. The initial QE measurements of these samples are done in our newly build in-situ QE measurement system and the first results of QE analyses done at Helmholtz-Zentrum Dresden-Rossendorf (HZDR) are presented in a dedicated contribution.}},
}