Paper | Title | Other Keywords | Page |
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TUPTS034 | Development of Low Inductance Circuit for Radially Symmetric Circuit | experiment, impedance, kicker, operation | 2013 |
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Radiation symmetric type circuits using semiconductors of SIC-MOSFETs, one of next generation semiconductors, are composed of circuits in which many semiconductor switches are multiplexed in series and in parallel. Since the lengths of all parallel circuits are equal, the output waveform will not be distorted due to timing jitter or level change. This circuit is useful for outputting the waveform of ultrafast short pulse. Therefore, we have developed a circuit that achieves further low inductance by making the power transmission circuit into a double circular ring structure equal to the coaxial shape. Compare the inductance value obtained from the structure and the output waveform. In addition, we compare the calculation and the actual measurement in the actual test and present the verification result of the developed circular ring structure. | |||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-TUPTS034 | ||
About • | paper received ※ 01 May 2019 paper accepted ※ 23 May 2019 issue date ※ 21 June 2019 | ||
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TUPTS103 | The Progress of High Current High Bunch Charge Polarized Electron HVDC Gun | cathode, gun, electron, vacuum | 2160 |
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Funding: Work supported by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH10886 with the U.S. Department of Energy. The high current and high bunch charge polarized electron source is essential for cost reduction of eRHIC. It aims to deliver electron beam with 10 mA average current and 5.3 nC bunch charge. We analyzed the mechanism of cathode degradation and proposed using a large strain superlattice GaAs photocathode in a high voltage DC gun to increase the charge lifetime above kilo Coulomb. The gun has been designed and fabricated and expected to start commissioning by the mid of this year. In this paper, we will present the modeling of ion back bombardment and cathode degrading. We proposed an anode offset scheme to increase cathode lifetime. Also, we will describe the details of gun design and the strategies to demonstrate high current high charge polarized electron beam from this source. |
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DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-TUPTS103 | ||
About • | paper received ※ 15 May 2019 paper accepted ※ 21 May 2019 issue date ※ 21 June 2019 | ||
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WEPMP016 | The Design and Preliminary Test of a Stripline Kicker for HALS | kicker, impedance, simulation, vacuum | 2338 |
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Stripline kicker is an important components of both on-axis longitudinal accumulation and on-axis swap out injection schemes in HALS (Hefei Advanced Light Source). After more than one year of R&D, construction of the first prototype is completed. The kicker performance is simulated by CST. The results show that in the range of 0~1GHz, on differential mode, S11 is less than - 23.7dB. In order to facilitate installation, the extension part and PTFE bracket were designed. The assembly of kicker and feedthrough has been tested with pulse generator and network analyser. | |||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-WEPMP016 | ||
About • | paper received ※ 25 April 2019 paper accepted ※ 20 May 2019 issue date ※ 21 June 2019 | ||
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WEPMP040 | Machine Protection Aspects of High-Voltage Flashovers of the LHC Beam Dump Dilution Kickers | kicker, operation, simulation, vacuum | 2418 |
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The LHC Beam Dump System is required to safely dispose of the energy of the stored beam. In order to reduce the energy density deposited in the beam dump, a dedicated dilution system is installed. On July 14, 2018, during a regular beam dump at 6.5 TeV beam energy, a high-voltage flashover of two vertical dilution kickers was observed, leading to a voltage breakdown and reduced dilution in the vertical plane. It was the first incident of this type since the start of LHC beam operation. In this paper, the flashover event is described and the implications analysed. Circuit simulations of the current in the magnet coil as well as simulations of the resulting beam sweep pattern are presented and compared with the measurements. The criticality of the event is assessed and implications for future failure scenarios are discussed. | |||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-WEPMP040 | ||
About • | paper received ※ 14 May 2019 paper accepted ※ 20 May 2019 issue date ※ 21 June 2019 | ||
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WEPGW033 | Development of the Bunch Shape Monitor Using the Carbon-Nano Tube Wire | electron, vacuum, operation, DTL | 2543 |
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A bunch shape monitor (BSM) is one of the important instruments to measure the longitudinal phase space distribution. The information of the bunch length measured by the BSM is useful to tune phases of the accelerating cavities in the linear accelerator. For example, in the J-PARC linac, three BSM’s using the tungsten wire are installed and tested at the ACS section to measure the bunch shapes between the accelerating cavities. However, this conventional BSM is hard to measure the bunch shape of H− beam with 3 MeV at the beam transport between the RFQ and DTL sections, because the wire is broken around the center region of the beam. The new BSM using the carbon-nano-tube (CNT) wire is being developed to be able to measure the bunch shape of the H− beam with 3 MeV. One challenge to introduce the CNT wire for the BSM is the measure to the discharge. The careful attention should be paid to apply the high voltage of 10 kV to the CNT wire. The several measures are taken to suppress the discharge from the wire and operate the CNT-BSM. This presentation reports the current status of the development and future prospective for the CNT-BSM. | |||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-WEPGW033 | ||
About • | paper received ※ 15 May 2019 paper accepted ※ 22 May 2019 issue date ※ 21 June 2019 | ||
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THPRB025 | New MicroTCA Piezo Driver (PZT4) | cavity, controls, operation, power-supply | 3860 |
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In the paper we would like to present a new Micro Telecommunication Computing Architecture (MicroTCA) piezo driver (PZT4). The piezo driver module is capable of driving of 4 piezo actuators with high voltages up to 160 Vpp. It is also possible to measure cavity mechanical vibrations using 4 analog to digital converters (ADC) ported to the driver electronics. The new piezo driver can be supplied using internal 12 V payload power provided by the MicroTCA standard. For the applications that need more than 30 W of the input power, the external power supply module can be provided. In order to protect the piezo driver electronics against output short condition a dedicated supervision circuit is designed. The piezo driver module has been setup at Cryo Module Test Bench (CMTB) facility in Deutsches-Elektronen Synchrotron (DESY) as a part of the single cavity low-level radio frequency (LLRF) controls. The LLRF control system has been used to demonstrate the radio frequency (RF) field stabilization and cavity tuning capabilities for continuous (CW) and pulse modes of operation of 1.3 GHz superconducting resonant RF (SCRF) cavity. The preliminary results are demonstrated and briefly discussed. | |||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-THPRB025 | ||
About • | paper received ※ 08 May 2019 paper accepted ※ 21 May 2019 issue date ※ 21 June 2019 | ||
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THPRB079 | DC Testing and Phase Resolved Partial Discharge Measurements of the New Trigger Transformers for the LHC Beam Dump Kickers | operation, kicker, GUI, power-supply | 3998 |
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During LS2 the LHC beam dump kicker pulse generators will be subject to a substantial consolidation program. One major part is the replacement of the existing GTO stack trigger transformer by a new more performant one. The transformer is assembled, moulded and tested in-house. Part of the validation procedure are standard DC tests and subsequent discharge monitoring as well as newly introduced phase resolved partial discharge measurements. This paper briefly highlights the trigger transformer parameters and construction and outlines in detail the testing and partial discharge measurements. It concludes with a comparison and analysis of the results of the different measurement techniques. | |||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-THPRB079 | ||
About • | paper received ※ 14 May 2019 paper accepted ※ 23 May 2019 issue date ※ 21 June 2019 | ||
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THPRB105 | ESS Klystron Production Test Stand | klystron, controls, power-supply, cathode | 4074 |
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Diversified Technologies, Inc. (DTI) has delivered a new long-pulse modulator klystron test stand to Communication and Power Industries (CPI) in Palo Alto, CA for full power testing of production VKP-8292A klystrons for the European Spallation Source (ESS). This test stand was built using hardware and designs from an earlier SBIR effort for the US Department of Energy, with modifications to support ESS requirements and klystron testing operation. Earlier versions of this design are in use at IPN Orsay and CEA Saclay in France to test RF components for ESS. This new klystron test stand allows testing of klystrons at the full ESS specifications: 100 kV, 50 A, 3.5 ms pulse, 14 Hz,. This design is based on a (patent pending) non-dissipative regulator that compensates for the capacitor droop voltage (~20%) during the pulse. This allows a much smaller capacitor than would nominally be required for the long ESS pulse, eliminating the need for larger, more expensive capacitor bank. This test stand will speed delivery of ESS klystrons, and similar, long pulse, high power klystrons at CPI. | |||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-THPRB105 | ||
About • | paper received ※ 19 May 2019 paper accepted ※ 22 May 2019 issue date ※ 21 June 2019 | ||
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FRXXPLM3 | Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFET | pulsed-power, power-supply, electron, operation | 4364 |
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Funding: A part of this work has been implemented under a joint research project of Tsukuba Power Electronics Constellation (TPEC). To resolve the drawback of conventional thyratron switches, development of a semiconductor high voltage switch utilizing a 13 kV class SiC-MOSFET developed by Tsukuba Power Electronics Constellations (TPEC) is proceeding. At first, the device evaluation test was carried out with a resistive load circuit. With the conditions of drain voltage of 10 kV and load resistance of 1 kΩ, turn on loss Eon, turn off loss Eoff, rise time Tr and fall time Tf were 1.7 mJ, 1.1 mJ, 64 ns, and 75 ns, respectively. As to gate charge characteristics, required electric charge to increase gate source voltage from 0 V to 20 V was about 80 nC. Thereafter, the 2s-12p switch array was designed and assembled, where 12 MOSFETs are equally aligned on a circle shaped circuit board and two circuit boards are stacked in series. A 14 kV-490 A-5 us pulse with a rise time of 430 ns in the long pulse mode and a 18 kV-318 A-1 us pulse with a rise time of 289 ns in the short pulse mode were successfully demonstrated. This switch will be installed as a turn-off switch for the injec-tion ES kicker in the KEK-DA. |
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Slides FRXXPLM3 [5.088 MB] | ||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-FRXXPLM3 | ||
About • | paper received ※ 15 May 2019 paper accepted ※ 21 May 2019 issue date ※ 21 June 2019 | ||
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