Author: Maxson, J.M.
Paper Title Page
MOPAB150 Imaging the Spatial Modulation of a Relativistic Electron Beam 480
 
  • C. Zhang, W.S. Graves, L.E. Malin, J. Spence
    Arizona State University, Tempe, USA
  • D.B. Cesar, J.M. Maxson, P. Musumeci, A. Urbanowicz
    UCLA, Los Angeles, USA
  • C. Limborg, E.A. Nanni
    SLAC, Menlo Park, California, USA
 
  Funding: Work supported by NSF awards 1632780, 1415583, 1231306 and DOE award de-sc0009914
We describe Bragg diffraction of relativistic electron beams through a patterned Si crystal consisting of alternating thick and thin strips to produce nanometer scale electron density modulations. Multi-slice simulations show that a two-beam situation can be set up where, for a particular thickness of Si, nearly 100% of the electron beam is diffracted. Plans are underway to carry out experiments showing this effect in UCLA's ultrafast electron microscopy lab with 3.5 MeV electrons. We will select either the diffracted beam or the primary beam with a small aperture in the diffraction plane of a magnetic lens, and so record either the dark or bright field magnified image of the strips. Our first goal is to observe the nanopatterned beam at the image plane. We will then investigate various crystal thickness and sample orientations to maximize the contrast in the pattern and explore tuning the period of the modulation through varying magnification.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-MOPAB150  
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TUPAB126 Multi-objective Genetic Optimization of Single Shot Ultrafast Electron Diffraction Beamlines 1615
 
  • C.M. Gulliford, A.C. Bartnik, I.V. Bazarov
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • J.M. Maxson
    UCLA, Los Angeles, California, USA
 
  We present the results of multi-objective genetic algorithm optimizations of two single-shot ultrafast electron diffraction (UED) beam lines. The first is based on a 225 kV dc gun featuring a novel cryocooled photocathode system and buncher cavity. The second uses a 100 MV/m 1.6 cell normal conducting rf (NCRF) gun, as well as a 9 cell 2 Pi/3 bunching cavity placed between two solenoids. Optimizations of the transverse projected emittance as a function of bunch charge are presented and discussed in terms of the scaling laws derived in the charge saturation limit. Additionally, optimization of the transverse coherence length as a function of final rms bunch length at the sample location have been performed. These results demonstrate the viability of the approaches taken for both beamlines studied as well as the use of using genetic algorithms in the design and operation of UED beamlines.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-TUPAB126  
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TUPAB128 Single Photoemitter Tips in a DC Gun: Limiting Aberration-induced Emittance 1622
 
  • I.V. Bazarov, L. Cultrera, C.M. Gulliford, H. Lee
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • H.K. Fung
    Cornell University, Ithaca, New York, USA
  • J.M. Maxson
    UCLA, Los Angeles, California, USA
 
  Ultrafast electron diffraction (UED) offers unique advantages over x-ray diffraction, like stronger scattering cross-section, versatility in sample types and ability to offer smaller apparatus foot print. There is a growing need to increase brightness of electron beams especially for single-shot UED applications. We explore the utilization of field enhancement from a micron-scale single tip inside a DC gun to obtain brighter sub-pC electron beams using a nominal cathode electric field of several MV/m. The additional field enhancement can place moderate voltage sources on par with the highest gradient devices and allow improved performance presently not possible in the existing photoemission guns.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-TUPAB128  
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