CYCLOTRONS2022 - List of Authors (Chen, Q.)

Paper	Title	Page
MOBO04	Experimental Study on Proton Irradiation Effect of Gallium Nitride High Electron Mobility Transistor	42
	z. Zhang, Q. Chen, G. Guo, C.C. Liu CIAE, Beijing, People’s Republic of China
	As a third-generation semiconductor material, gallium nitride (GaN) has the advantages of high breakdown electric field, high electron saturation speed, high operating temperature and strong radiation resistance, and has broad application prospects in the aerospace field. As an important member of GaN-based electronic devices, GaN high electron mobility transistor (HEMT) is widely considered to be used in the power supply and other important systems of spacecraft. Therefore, GaN HEMT is of great significance for spacecraft to complete relevant setting tasks. However, GaN HEMT will inevitably be affected by space radiation environment when spacecraft perform related missions. Previous researches have shown that protons are the majority of high-energy particles in space environment. Therefore, relevant studies should focus on the effect of proton irradiation on the performance of GaN HEMT. Using 100 MeV high-current proton cyclotron, we investigated the proton irradiation effect of GaN HEMT, and proved the effect of proton energy on static electrical parameters of GaN. The research work in this paper lays a foundation for the future application of GaN HEMT in space missions.
	Slides MOBO04 [2.860 MB]
DOI •	reference for this paper ※ doi:10.18429/JACoW-CYCLOTRONS2022-MOBO04
About •	Received ※ 15 December 2022 — Revised ※ 14 February 2023 — Accepted ※ 17 February 2023 — Issue date ※ 18 April 2023
Cite •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

THPO002	Study on Proton Radiation Effect and Self-Repair of SiC-JBS Diodes	291
	C.C. Liu, Q. Chen, G. Guo, H.L. Shi, F.Q. Zhang, z. Zhang CIAE, Beijing, People’s Republic of China
	Funding: CNNC "Young Talents" Scientific Research Project (11FY212306000801) In this study, the influence of proton irradiation experiments at 40 MeV and p/cm² on Silicon Carbide Junction Barrier Schottky (SiC-JBS) diodes with stripe cell and hexagonal cell designs was investigated, respectively. Considering the displacement damage effect of SiC-JBS diodes, the experiments was implemented on unbiased SiC-JBS diodes based on 100 MeV high intensity proton cyclotron of China Institute of Atomic Energy. The results show that the current voltage (IV) and capacitive voltage (CV) characteristics of the SiC-JBS diodes are obviously degraded by proton irradiation. After 168 h of room temperature annealing, the forward IV characteristics of the SiC-JBS diodes are basically restored but the reverse leakage current is increased. After 336 h of room temperature annealing, the forward IV characteristic of the diodes is completely restored, but the reserve IV characteristic of the diodes with stripe cell is completely restored. And the CV characteristic is degraded of the two kinds of SiC-JBS diodes permanently, which indicating that room temperature annealing cannot restore the proton radiation displacement damage defects. Combined with Monte Carlo simulations, it is shown that proton irradiation will introduce ionization defects and displacement defects into the SiC-JBS diodes, in which the disappearance of displacement damage defects will eventually lead to the degradation of electrical properties of reverse IV and CV. The analysis of the SiC-JBS diodes structure shows that, without considering the diode materials and process level, the SiC-JBS diode with hexagonal cells is more resistant to proton irradiation displacement damage and has stronger room temperature annealing self-repair ability than the SiC-JBS diodes with stripe cells, even though its chip area is smaller. On the other hand, the SiC-JBS diodes with hexagonal cells can be used preferentially in the radiation environment where there is a large amount of proton.
	Poster THPO002 [5.018 MB]
DOI •	reference for this paper ※ doi:10.18429/JACoW-CYCLOTRONS2022-THPO002
About •	Received ※ 21 December 2022 — Revised ※ 21 January 2023 — Accepted ※ 14 March 2023 — Issue date ※ 14 April 2023
Cite •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

THPO003	Applications of the CYCIAE-100 Cyclotron in Neutron-Induced Single Event Effect	295
	Q. Chen, J. Bao, G. Guo, J.H. Han, X. Ma, H.Y. Zhao CIAE, Beijing, People’s Republic of China
	Neutron-induced single event effect is one of the significant factors affecting the reliability of semiconductor devices in avionics and ground facilities. The 100 MeV proton cyclotron in China Institute of Atomic Energy (Cyciae-100) provides white neutron and quasi-monoenergetic neutron induced by proton and W/Li bombardment. Based on the white neutron beam line of Cyciae-100, the white neutron energy spectrum is measured by neutron time-of-flight method with double scintillator spectrometer, as well as the theoretical energy spectrum calculated by the Monte Carlo method. The neutron irradiation test of two SRAMs with different technology nodes were carried out, and the neutron single event upset sections are obtained simultaneously. In addition, based on the quasi-monoenergetic neutron beam line, the simulation of neutron energy spectrum and experimental measurement of neutron single event upset cross section for SRAMs were carried out. As a conclusion, the white neutron and quasi-monoenergetic neutron provided by Cyciae-100 are well suitable applied to the study of neutron single event effects.
	Poster THPO003 [0.726 MB]
DOI •	reference for this paper ※ doi:10.18429/JACoW-CYCLOTRONS2022-THPO003
About •	Received ※ 31 December 2022 — Revised ※ 21 January 2023 — Accepted ※ 31 January 2023 — Issue date ※ 02 April 2023
Cite •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Experimental Study on Proton Irradiation Effect of Gallium Nitride High Electron Mobility Transistor

42

z. Zhang, Q. Chen, G. Guo, C.C. Liu
CIAE, Beijing, People’s Republic of China

As a third-generation semiconductor material, gallium nitride (GaN) has the advantages of high breakdown electric field, high electron saturation speed, high operating temperature and strong radiation resistance, and has broad application prospects in the aerospace field. As an important member of GaN-based electronic devices, GaN high electron mobility transistor (HEMT) is widely considered to be used in the power supply and other important systems of spacecraft. Therefore, GaN HEMT is of great significance for spacecraft to complete relevant setting tasks. However, GaN HEMT will inevitably be affected by space radiation environment when spacecraft perform related missions. Previous researches have shown that protons are the majority of high-energy particles in space environment. Therefore, relevant studies should focus on the effect of proton irradiation on the performance of GaN HEMT. Using 100 MeV high-current proton cyclotron, we investigated the proton irradiation effect of GaN HEMT, and proved the effect of proton energy on static electrical parameters of GaN. The research work in this paper lays a foundation for the future application of GaN HEMT in space missions.

Slides MOBO04 [2.860 MB]

DOI •

reference for this paper ※ doi:10.18429/JACoW-CYCLOTRONS2022-MOBO04

About •

Received ※ 15 December 2022 — Revised ※ 14 February 2023 — Accepted ※ 17 February 2023 — Issue date ※ 18 April 2023

Cite •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

THPO002

Study on Proton Radiation Effect and Self-Repair of SiC-JBS Diodes

291

C.C. Liu, Q. Chen, G. Guo, H.L. Shi, F.Q. Zhang, z. Zhang
CIAE, Beijing, People’s Republic of China

Funding: CNNC "Young Talents" Scientific Research Project (11FY212306000801)
In this study, the influence of proton irradiation experiments at 40 MeV and p/cm² on Silicon Carbide Junction Barrier Schottky (SiC-JBS) diodes with stripe cell and hexagonal cell designs was investigated, respectively. Considering the displacement damage effect of SiC-JBS diodes, the experiments was implemented on unbiased SiC-JBS diodes based on 100 MeV high intensity proton cyclotron of China Institute of Atomic Energy. The results show that the current voltage (IV) and capacitive voltage (CV) characteristics of the SiC-JBS diodes are obviously degraded by proton irradiation. After 168 h of room temperature annealing, the forward IV characteristics of the SiC-JBS diodes are basically restored but the reverse leakage current is increased. After 336 h of room temperature annealing, the forward IV characteristic of the diodes is completely restored, but the reserve IV characteristic of the diodes with stripe cell is completely restored. And the CV characteristic is degraded of the two kinds of SiC-JBS diodes permanently, which indicating that room temperature annealing cannot restore the proton radiation displacement damage defects. Combined with Monte Carlo simulations, it is shown that proton irradiation will introduce ionization defects and displacement defects into the SiC-JBS diodes, in which the disappearance of displacement damage defects will eventually lead to the degradation of electrical properties of reverse IV and CV. The analysis of the SiC-JBS diodes structure shows that, without considering the diode materials and process level, the SiC-JBS diode with hexagonal cells is more resistant to proton irradiation displacement damage and has stronger room temperature annealing self-repair ability than the SiC-JBS diodes with stripe cells, even though its chip area is smaller. On the other hand, the SiC-JBS diodes with hexagonal cells can be used preferentially in the radiation environment where there is a large amount of proton.

Poster THPO002 [5.018 MB]

DOI •

reference for this paper ※ doi:10.18429/JACoW-CYCLOTRONS2022-THPO002

About •

Received ※ 21 December 2022 — Revised ※ 21 January 2023 — Accepted ※ 14 March 2023 — Issue date ※ 14 April 2023

Cite •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

THPO003

Applications of the CYCIAE-100 Cyclotron in Neutron-Induced Single Event Effect

295

Q. Chen, J. Bao, G. Guo, J.H. Han, X. Ma, H.Y. Zhao
CIAE, Beijing, People’s Republic of China

Neutron-induced single event effect is one of the significant factors affecting the reliability of semiconductor devices in avionics and ground facilities. The 100 MeV proton cyclotron in China Institute of Atomic Energy (Cyciae-100) provides white neutron and quasi-monoenergetic neutron induced by proton and W/Li bombardment. Based on the white neutron beam line of Cyciae-100, the white neutron energy spectrum is measured by neutron time-of-flight method with double scintillator spectrometer, as well as the theoretical energy spectrum calculated by the Monte Carlo method. The neutron irradiation test of two SRAMs with different technology nodes were carried out, and the neutron single event upset sections are obtained simultaneously. In addition, based on the quasi-monoenergetic neutron beam line, the simulation of neutron energy spectrum and experimental measurement of neutron single event upset cross section for SRAMs were carried out. As a conclusion, the white neutron and quasi-monoenergetic neutron provided by Cyciae-100 are well suitable applied to the study of neutron single event effects.

Poster THPO003 [0.726 MB]

DOI •

reference for this paper ※ doi:10.18429/JACoW-CYCLOTRONS2022-THPO003

About •

Received ※ 31 December 2022 — Revised ※ 21 January 2023 — Accepted ※ 31 January 2023 — Issue date ※ 02 April 2023

Cite •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)