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RIS citation export for MOBO04: Experimental Study on Proton Irradiation Effect of Gallium Nitride High Electron Mobility Transistor

TY  - CONF
AU  - Zhang, z.
AU  - Chen, Q.
AU  - Guo, G.
AU  - Liu, C.C.
ED  - Zhang, Tianjue
ED  - Schaa, Volker R.W.
ED  - An, Shizhong
ED  - Kiselev, Daniela
ED  - Liu, Yuntao
ED  - Li, Pengzhan
TI  - Experimental Study on Proton Irradiation Effect of Gallium Nitride High Electron Mobility Transistor
J2  - Proc. of CYCLOTRONS2022, Beijing, China, 05-09 December 2022
CY  - Beijing, China
T2  - International Conference on Cyclotrons and their Applications
T3  - 23
LA  - english
AB  - As a third-generation semiconductor material, gallium nitride (GaN) has the advantages of high breakdown electric field, high electron saturation speed, high operating temperature and strong radiation resistance, and has broad application prospects in the aerospace field. As an important member of GaN-based electronic devices, GaN high electron mobility transistor (HEMT) is widely considered to be used in the power supply and other important systems of spacecraft. Therefore, GaN HEMT is of great significance for spacecraft to complete relevant setting tasks. However, GaN HEMT will inevitably be affected by space radiation environment when spacecraft perform related missions. Previous researches have shown that protons are the majority of high-energy particles in space environment. Therefore, relevant studies should focus on the effect of proton irradiation on the performance of GaN HEMT. Using 100 MeV high-current proton cyclotron, we investigated the proton irradiation effect of GaN HEMT, and proved the effect of proton energy on static electrical parameters of GaN. The research work in this paper lays a foundation for the future application of GaN HEMT in space missions.
PB  - JACoW Publishing
CP  - Geneva, Switzerland
SP  - 42
EP  - 46
KW  - proton
KW  - radiation
KW  - experiment
KW  - ECR
KW  - electron
DA  - 2023/10
PY  - 2023
SN  - 2673-5482
SN  - 978-3-95450-212-7
DO  - doi:10.18429/JACoW-CYCLOTRONS2022-MOBO04
UR  - https://jacow.org/cyclotrons2022/papers/mobo04.pdf
ER  -