IPAC2015 - List of Authors (Marracino, F.)

Paper	Title	Page
TUPWI003	Proton Beam Applications for Silicon Bulk Micromachining	2241
	P. Nenzi, G. Bazzano, F. Marracino, L. Picardi, C. Ronsivalle, V. Surrenti, M. Vadrucci ENEA C.R. Frascati, Frascati (Roma), Italy F. Ambrosini University of Rome La Sapienza, Rome, Italy F. Ambrosini Università di Roma "La Sapienza", SAPIENZA-DIET, Roma, Italy M. Balucani, A. Klyshko University of Rome "La Sapienza", Rome, Italy C. Snels, M. Tucci ENEA Casaccia, Roma, Italy
	The irradiation of silicon with ion beams is an established technique to modify its properties. Protons are used for micromachining applications, in conjunction with porous silicon. Porous silicon does not form in areas irradiated with a given fluence of protons (>10¹⁴ cm^-2). Our work concentrated on the applicability of masked irradiation of silicon wafers with 1.8 MeV proton beams delivered by the TOP-IMPLART LINAC. In our experiments 1-10 Ω*cm n,p-type silicon wafers were masked and irradiated with protons at fluences between 10¹⁴ and 10¹⁵ protons/cm². Porous silicon did not form in the irradiated areas up to a distance from the surface corresponding to the stopping range (30um). The suppression of porous silicon formation is due to the to the neutralization of dopant impurities by implanted protons that increases the local resistivity. The interest in using RF LINAC for micromachining applications lies in the possibility of deep implantation, that allows the realization of 3D structures for MEMS applications. The use of metal masks with uniform beams, instead of scanned micro- and nano-metric ion probes, increases throughput achievable in industrial processing of wafers.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPWI003
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TUPWI004	Status of the TOP-IMPLART Proton LINAC	2245
	P. Nenzi, A. Ampollini, G. Bazzano, F. Marracino, L. Picardi, C. Ronsivalle, V. Surrenti, M. Vadrucci ENEA C.R. Frascati, Frascati (Roma), Italy F. Ambrosini University of Rome La Sapienza, Rome, Italy F. Ambrosini Università di Roma "La Sapienza", SAPIENZA-DIET, Roma, Italy C. Snels ENEA Casaccia, Roma, Italy
	In this work we present the latest update on the TOP-IMPLART LINAC. It is a 150 MeV proton linear accelerator for protontherapy application under realization at ENEA-Frascati in the framework of a project developed by ENEA, the Italian National Institute of Health (ISS) and Regina Elena National Cancer Institute-IFO-Rome. The accelerator consists of a 7 MeV injector operating at 425 MHz followed by a LINAC booster working at 2997.92 MHz at a maximum repetition frequency of 100 Hz. The medium energy section up to 35 MeV is a sequence of four SCDTL modules (Side Coupled Drift Tube LINAC) powered by a single 10 MW klystron: the first module bringing beam energy from 7MeV to 11.6MeV with an input power of 1.3 MW in a 4usec pulse has been successfully commissioned with a 10 uA per pulse beam accelerated at the design energy demonstrating the functionality of low energy proton acceleration at high RF frequency. The effects on beam dynamics, caused by the absence of any harmonic relation between the two operating frequencies of the LINAC has been simulated and experimentally verified during the commissioning activity. The second and third module installation and testing is undergoing.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPWI004
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Paper

Title

Page

Proton Beam Applications for Silicon Bulk Micromachining

2241

P. Nenzi, G. Bazzano, F. Marracino, L. Picardi, C. Ronsivalle, V. Surrenti, M. Vadrucci
ENEA C.R. Frascati, Frascati (Roma), Italy
F. Ambrosini
University of Rome La Sapienza, Rome, Italy
F. Ambrosini
Università di Roma "La Sapienza", SAPIENZA-DIET, Roma, Italy
M. Balucani, A. Klyshko
University of Rome "La Sapienza", Rome, Italy
C. Snels, M. Tucci
ENEA Casaccia, Roma, Italy

The irradiation of silicon with ion beams is an established technique to modify its properties. Protons are used for micromachining applications, in conjunction with porous silicon. Porous silicon does not form in areas irradiated with a given fluence of protons (>10¹⁴ cm^-2). Our work concentrated on the applicability of masked irradiation of silicon wafers with 1.8 MeV proton beams delivered by the TOP-IMPLART LINAC. In our experiments 1-10 Ω*cm n,p-type silicon wafers were masked and irradiated with protons at fluences between 10¹⁴ and 10¹⁵ protons/cm². Porous silicon did not form in the irradiated areas up to a distance from the surface corresponding to the stopping range (30um). The suppression of porous silicon formation is due to the to the neutralization of dopant impurities by implanted protons that increases the local resistivity. The interest in using RF LINAC for micromachining applications lies in the possibility of deep implantation, that allows the realization of 3D structures for MEMS applications. The use of metal masks with uniform beams, instead of scanned micro- and nano-metric ion probes, increases throughput achievable in industrial processing of wafers.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPWI003

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reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

TUPWI004

Status of the TOP-IMPLART Proton LINAC

2245

P. Nenzi, A. Ampollini, G. Bazzano, F. Marracino, L. Picardi, C. Ronsivalle, V. Surrenti, M. Vadrucci
ENEA C.R. Frascati, Frascati (Roma), Italy
F. Ambrosini
University of Rome La Sapienza, Rome, Italy
F. Ambrosini
Università di Roma "La Sapienza", SAPIENZA-DIET, Roma, Italy
C. Snels
ENEA Casaccia, Roma, Italy

In this work we present the latest update on the TOP-IMPLART LINAC. It is a 150 MeV proton linear accelerator for protontherapy application under realization at ENEA-Frascati in the framework of a project developed by ENEA, the Italian National Institute of Health (ISS) and Regina Elena National Cancer Institute-IFO-Rome. The accelerator consists of a 7 MeV injector operating at 425 MHz followed by a LINAC booster working at 2997.92 MHz at a maximum repetition frequency of 100 Hz. The medium energy section up to 35 MeV is a sequence of four SCDTL modules (Side Coupled Drift Tube LINAC) powered by a single 10 MW klystron: the first module bringing beam energy from 7MeV to 11.6MeV with an input power of 1.3 MW in a 4usec pulse has been successfully commissioned with a 10 uA per pulse beam accelerated at the design energy demonstrating the functionality of low energy proton acceleration at high RF frequency. The effects on beam dynamics, caused by the absence of any harmonic relation between the two operating frequencies of the LINAC has been simulated and experimentally verified during the commissioning activity. The second and third module installation and testing is undergoing.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPWI004

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reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)