Author: Huang, R.
Paper Title Page
THPMK123 Initial Design on the High Quality Electron Beam for the Hefei Advanced Light Source 4605
 
  • R. Huang, Z.G. He, Q.K. Jia, Y. Lu, L. Wang
    USTC/NSRL, Hefei, Anhui, People's Republic of China
  
  Funding: Work is supported by China Postdoctoral Science Foundation (Grant No. 51627901) and Chinese Universities Scientific Fund (Contract WK2310000063)
The Hefei Advanced Light Source (HALS) was proposed as a future soft X-ray diffraction-limited storage ring with a Free Electron Laser (FEL) at National Synchrotron Radiation Laboratory (NSRL). We present a design for a high brightness electron source as an injector of a 2.4 GeV linac-based diffraction limited storage ring and a free electron laser. The electron beams with low emittance and high peak current will be generated from a photoinjector and designed to fulfill the requirement of the HALS. To compress the bunch length and enhance the pulse current, velocity bunching scenario by a deceleration injection phase is designed. Owing to a linear compression, the electron beam is expected to be extremely short with a further magnetic compression. 		 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPMK123  
Export • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)  
 
THPMK124 The Radiation Source for a Pre-Bunched THz Free Electron Laser 4608
 
  • R. Huang, Z.G. He, Q.K. Jia, H.T. Li, W.W. Li, Y. Lu, L. Wang, Z. Zhao
    USTC/NSRL, Hefei, Anhui, People's Republic of China
  
  Funding: Work is supported by National Natural Science Foundation of China (Grant No. 51627901)
Electron beam, generated in a photoinjector and bunched at terahertz (THz) frequency, will excite the coherent THz radiation when entering an undulator. We present a scheme of the radiation source for the pre-bunched THz free electron laser (FEL). The physical design of electron source is described in detail. The radiation frequency is widely tunable by both the pulse train tuning and the undulator gap tuning. It is simulation proved that the radiation power is greatly enhanced in our scheme. 		 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPMK124  
Export • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)  
 
THPMK125 Development of Non-Evaporable Getter (NEG) Coatings on Small Diameter Vacuum Chambers for Diffraction-Limited Storage Ring 4611
 
  • S. Wang, Y.Z. Hong, R. Huang, X.T. Pei, Y. Wang, W. Wei, B. Zhang, S.C. Zhang
    USTC/NSRL, Hefei, Anhui, People's Republic of China
  
  Design of the fourth generation Diffraction-Limited Storage Ring reduces aperture of vacuum chambers to a few centimeters. To satisfy the small aperture, the intense photon bombardment and the requirement of low pressure, most of the beam pipes need to be deposited with Ti-Zr-V nonevaporable getter (NEG) thin films. NEG can provide distributed pumping and low gas desorption and allow to achieve low pressure in narrow and conductance limited chambers. In this paper, Ti-Zr-V thin film was deposited by DC magnetron sputtering using Ti-Zr-V alloy target. The morphology and thickness of Ti-Zr-V are characterized by Scanning Electron Microscopy (SEM). The average grain size is evaluated using X-ray diffraction (XRD). The composition and the corresponding chemical bonding of the thin film are analyzed by X-ray Photoelectron Spectroscopy (XPS). Finally, the adhesion between the film and substrate and the vacuum performance are evaluated.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPMK125  
Export • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)