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TUAO04 |
Investigation of Novel Radiation Hard and Fast Scintillator for Heavy Ions Detection | ||||
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ZnO is a well known semiconductor material, that has found application in many fields of technology: phosphors, scintillators, varistors, gas sensors, etc*. Recently it was found that fast near-band-edge luminescence in ZnO ceramics can be significantly enhanced by introducing In3+ and Ga3+ impurities**. Due to this property, doped ZnO is of great interest for fast counting applications, in particular for beam diagnostics application at future FAIR facility***. In this contribution, we present the results of swift heavy ion induced luminescence measurements of ZnO(In) ceramics performed at GSI. Samples were irradiated with 4.8 MeV/u 48Ca and 197Au ions up to fluences of 5·10+12 and 2·10+11 ion/cm2 respectively. Iono-luminescence spectra were monitored on-line as a function of fluence. ZnO(In) and ZnO(Ga) ceramics demonstrate several orders of magnitude higher radiation hardness than plastic scintillators. This investigation is part of a larger research program for beam intensity, spill structure and beam profile measurements with ZnO fast scintillators.
* Klingshirn et al., Phys. Stat. Solidi B, Vol.247, No.6, (2010), 1424-1447 ** Rodnyi et al., IEEE T.Nucl. Sci. Vol.59, No.5, (2012), 2152-2155 *** Boutachkov et al., Proceedings of IBIC19, (2019) |
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Slides TUAO04 [1.644 MB] | ||||
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