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RIS citation export for TUAO04: Investigation of Novel Radiation Hard and Fast Scintillator for Heavy Ions Detection

TY  - UNPB
AU  - Saifulin, M.
AU  - Boutachkov, P.
AU  - Gorokhova, E.I.
AU  - Rodnyi, P.
AU  - Simon, P.
AU  - Trautmann, C.
AU  - Venevtsev, I.D.
AU  - Walasek-Höhne, B.
ED  - Tavares, Daniel
ED  - Picoreti, Renan
ED  - Bruno, Gustavo
ED  - Marques, Sergio
ED  - Schaa, Volker R.W.
TI  - Investigation of Novel Radiation Hard and Fast Scintillator for Heavy Ions Detection
J2  - Proc. of IBIC2020, Santos, Brazil, 14-18 September 2020
CY  - Santos, Brazil
T2  - International Beam Instrumentation Conference
T3  - 9
LA  - english
AB  - ZnO is a well known semiconductor material, that has found application in many fields of technology: phosphors, scintillators, varistors, gas sensors, etc*. Recently it was found that fast near-band-edge luminescence in ZnO ceramics can be significantly enhanced by introducing In³⁺ and Ga³⁺ impurities**. Due to this property, doped ZnO is of great interest for fast counting applications, in particular for beam diagnostics application at future FAIR facility***. In this contribution, we present the results of swift heavy ion induced luminescence measurements of ZnO(In) ceramics performed at GSI. Samples were irradiated with 4.8 MeV/u 48Ca and 197Au ions up to fluences of 5·10⁺¹² and 2·10⁺¹¹ ion/cm² respectively. Iono-luminescence spectra were monitored on-line as a function of fluence. ZnO(In) and ZnO(Ga) ceramics demonstrate several orders of magnitude higher radiation hardness than plastic scintillators. This investigation is part of a larger research program for beam intensity, spill structure and beam profile measurements with ZnO fast scintillators.
PB  - JACoW Publishing
CP  - Geneva, Switzerland
ER  -