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@unpublished{saifulin:ibic2020-tuao04,
author = {M. Saifulin and P. Boutachkov and E.I. Gorokhova and P. Rodnyi and P. Simon and C. Trautmann and I.D. Venevtsev and B. Walasek-Höhne},
% author = {M. Saifulin and P. Boutachkov and E.I. Gorokhova and P. Rodnyi and P. Simon and C. Trautmann and others},
% author = {M. Saifulin and others},
title = {{Investigation of Novel Radiation Hard and Fast Scintillator for Heavy Ions Detection}},
booktitle = {Proc. IBIC'20},
language = {english},
intype = {presented at the},
series = {International Beam Instrumentation Conference},
number = {9},
venue = {Santos, Brazil},
publisher = {JACoW Publishing, Geneva, Switzerland},
month = {oct},
year = {2020},
note = {presented at IBIC2020 in Santos, Brazil, unpublished},
abstract = {ZnO is a well known semiconductor material, that has found application in many fields of technology: phosphors, scintillators, varistors, gas sensors, etc*. Recently it was found that fast near-band-edge luminescence in ZnO ceramics can be significantly enhanced by introducing In³⁺ and Ga³⁺ impurities**. Due to this property, doped ZnO is of great interest for fast counting applications, in particular for beam diagnostics application at future FAIR facility***. In this contribution, we present the results of swift heavy ion induced luminescence measurements of ZnO(In) ceramics performed at GSI. Samples were irradiated with 4.8 MeV/u 48Ca and 197Au ions up to fluences of 5·10⁺¹² and 2·10⁺¹¹ ion/cm² respectively. Iono-luminescence spectra were monitored on-line as a function of fluence. ZnO(In) and ZnO(Ga) ceramics demonstrate several orders of magnitude higher radiation hardness than plastic scintillators. This investigation is part of a larger research program for beam intensity, spill structure and beam profile measurements with ZnO fast scintillators.},
}