Author: Sitaraman, N.
Paper Title Page
MOP010 Ab Initio Calculations on the Growth and Superconducting Properties of Nb3Sn 39
SUSP023   use link to see paper's listing under its alternate paper code  
 
  • N. Sitaraman, T. Arias, P. Cueva, M.M. Kelley, D.A. Muller
    Cornell University, Ithaca, New York, USA
  • J.M. Carlson, A.R. Pack, M.K. Transtrum
    Brigham Young University, Provo, USA
  • M. Liepe, R.D. Porter, Z. Sun
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
 
  Funding: This research was funded by the Center for Bright Beams.
In this work, we employ theoretical ab initio techniques to solve mysteries and gain new insights in Nb3Sn SRF physics. We determine the temperature dependence of Nb3Sn antisite defect formation energies, and discuss the implications of these results for defect segregation. We calculate the phonon spectral function for Nb3Sn cells with different combinations of antisite defects and use these results to determine Tc as a function of stoichiometry. These results allow for the first-ever determination of Tc in the tin-rich regime, where experimental measurements are unavailable and which is critical to understanding the impact of tin-rich grain boundaries on superconducting cavity performance. Finally, we propose a theory for the growth mechanism of Nb3Sn growth on a thick oxide, explaining the puzzling disappearing droplet behavior of Sn on Nb oxide and suggesting how in general an oxide layer reacts with Sn to produce a uniform Nb3Sn layer.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2019-MOP010  
About • paper received ※ 02 July 2019       paper accepted ※ 03 July 2019       issue date ※ 14 August 2019  
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MOP014 Electroplating of Sn Film on Nb Substrate for Generating Nb3Sn Thin Films and Post Laser Annealing 51
SUSP036   use link to see paper's listing under its alternate paper code  
 
  • Z. Sun, M. Liepe, T.E. Oseroff, R.D. Porter
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • T. Arias, A.B. Connolly, J.M. Scholtz, N. Sitaraman, M.O. Thompson
    Cornell University, Ithaca, USA
  • X. Deng
    University of Virginia, Charlottesville, Virginia, USA
  • K.D. Dobson
    University of Delaware, Newark, Delaware, USA
 
  Controlling film quality of Nb3Sn is critical to its SRF cavity performance. The state-of-the-art vapor diffusion approach for Nb3Sn deposition observed surface roughness, thin grain regions, and misfit dislocations which negatively affect the RF performance. The Sn deficiency and non-uniformity at the nucleation stage of vapor deposition is believed to be the fundamental reason to cause these roughness and defects issues. Thus, we propose to pre-deposit a uniform Sn film on the Nb substrate, which is able to provide sufficient Sn source during the following heat treatment for Nb3Sn nucleation and growth. Here, we demonstrated successful electrodeposition of a low-roughness, dendrite-free, excellent-adhesion Sn film on the Nb substrate. More importantly, we further achieved a uniform, low-roughness (Ra = 66 nm), pure-stoichiometric Nb3Sn film through thermal treatment of this electroplated Sn film in the furnace. Additionally, we provide preliminary results of laser annealing as a post treatment for epitaxial grain growth and roughness reduction.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2019-MOP014  
About • paper received ※ 22 June 2019       paper accepted ※ 30 June 2019       issue date ※ 14 August 2019  
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TUFUA1 The Field-Dependent Surface Resistance of Doped Niobium: New Experimental and Theoretical Results 340
 
  • J.T. Maniscalco, M. Ge, P.N. Koufalis, M. Liepe
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • T. Arias, D. Liarte, J.P. Sethna, N. Sitaraman
    Cornell University, Ithaca, New York, USA
 
  We present systematic work investigating how different doping and post-doping treatments affect the BCS surface resistance at 1.3~GHz and higher frequencies. We examine the field-dependent BCS resistance at many temperatures as well as the field-dependent residual resistance and use the results to reveal how impurity species and concentration levels affect the field-dependent RF properties. We further demonstrate the importance of thermal effects and their direct dependence on doping level. We use the tools of Density Functional Theory to work towards an {\em ab initio} model of electron overheating to theoretically confirm the impact of doping, create a full model that includes thermal effects to predict the field dependent resistance, and show that the predictions of the model agree with results from doped and non-doped cavities ({\em e.g.} the strength of the anti-Q-slope and the high-field Q slope). Finally, we use our experimental results to systematically assess and compare theories of the field-dependent BCS resistance, showing that the current theory on smearing of the density of states is incomplete.  
slides icon Slides TUFUA1 [6.780 MB]  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2019-TUFUA1  
About • paper received ※ 01 July 2019       paper accepted ※ 02 July 2019       issue date ※ 14 August 2019  
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TUP045 Ab Initio Calculations on Impurity Doped Niobium and Niobium Surfaces 523
 
  • N. Sitaraman, T. Arias
    Cornell University, Ithaca, New York, USA
  • R.G. Farber, S.J. Sibener, R.D. Veit
    The University of Chicago, Chicago, Illinois, USA
  • M. Liepe, J.T. Maniscalco
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
 
  Funding: This work was funded by the Center for Bright Beams
We develop and apply new tools to understand Nb surface chemistry and fundamental electronic processes using theoretical ab initio methods. We study the thermodynamics of impurities and hydrides in the near-surface region as well as their effect on the surface band gap. This makes it possible for experimentalists to relate changes in STM dI/dV measurements resulting from different preparations to changes in subsurface structure. We also calculate matrix elements for electron-impurity scattering in Nb for common impurities O, N, C, and H. By transforming these matrix elements into a Wannier function basis, we calculate lifetimes for a dense set of states on the Fermi surface and determine the mean free path as a function of impurity density. This technique can be generalized to calculate other scattering amplitudes and timescales relevant to SRF theory.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2019-TUP045  
About • paper received ※ 02 July 2019       paper accepted ※ 03 July 2019       issue date ※ 14 August 2019  
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