Author: Sitnikov, A.
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WECAMH01
 Ion Accelerators for Russian Mega-Science Projects  
 
  • T. Kulevoy, G. Kropachev, S.M. Polozov, A. Sitnikov
    ITEP, Moscow, Russia
  • T. Kulevoy, S.M. Polozov, A.V. Samoshin
    MEPhI, Moscow, Russia
  
  The mega-science facilities based on large scale accelerators are a distinctive feature of modernity. Today Nuclotron-based Ion Collider fAcility (NICA) is a flagman Russian mega-science project under implementation. As well several other projects of scientific facilities such as Dubna Electron-Radioactive Ion Collider fAcility (DERICA), 4th generation Dubna neutron source "Neptun" and Based on ECR and Linear Accelerator multidisciplinary facility (BELA) are under discussion. The ion linear accelerators required for these projects have different parameters - some of them are operated in cw mode another in pulses one, some has intensity of microamperes another tens of milliamperes, some of them accelerates proton beam only meanwhile another one accelerates ions up to uranium. Anyway the general structure of them (ion source, RFQ, normal conducting DTL and superconducting cavities) and approaches of the ion accelerator development are similar. The current status and main problems of the ion accelerator development for the projects are presented and discussed.  
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WECAMH03
 Normally Conducting Linacs in Russian Accelerator Projects  
 
  • G. Kropachev, T. Kulevoy, A. Sitnikov
    ITEP, Moscow, Russia
  
  At present, several accelerator projects are being developed in Russia, including ion linacs, such as NICA, DERICA, NEPTUN, BELA, etc. It is assumed that linacs will consist of two parts: normal conducting (NC) and superconducting (SC) linacs. The NC linacs are discussed in this article. Such linacs can differ each other significantly by mode of operation (pulsed or continuous), mass to charge ratio (1 - A/Z - 6.5), current magnitude (from 0.1 mA to 50 mA), etc. Anyway the layouts of these linacs have much in common. Different layouts of NC linacs are considered and the dynamics of particles in them for various projects is described. The requirements for the construction of NC linacs are substantiated, as well as the choice of the main parameters of the accelerating sections: operating frequency, maximum field strength, channel acceptance, focusing period structure, transition energy between accelerating sections, synchronous phase values, etc. The main design parameters of accelerating structures and their electrodynamic characteristics are given. The problems of technical realization for such linacs are discussed.  
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TUPSA41 Effect of Tin Ion Implantation on the Properties of Amorphous Ge2Sb2Te5 Thin Films 230
 
  • A. Sitnikov, P.A. Fedin, A.V. Kozlov, T. Kulevoy, D.N. Selesnev
    ITEP, Moscow, Russia
  • D.A. Dronova, P. I. Lazarenko, A. Sherchenkov, A.O. Yakubov
    National Research University of Electronic Technology, Moscow, Russia
  • S. A. Kozyukhin
    Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia
  
  Funding: This study was supported by RFBR (project 17-03-00450).
Alloys along the quasi-binary line between Sb2Te3 and GeTe with compositions (GeTe)m(Sb2Te3)n, in particular Ge2Sb2Te5, have been intensely studied and are used in the state-of-the-art PCM devices. However, properties of this thin film materials are not optimal and should be improved. In this work, we investigated the effect of tin ion implantation on the properties of amorphous Ge2Sb2Te5 thin films. The Sn ion implantation was done on Multipurpose Test Bench (MTB)* at NRC "Kurchatov Institute"-ITEP. The MTB consists of MEVVA type ion source, electrostatic focusing system, the system of current and beam profile measurements. The charge spectrum of the Sn beam was measured by the time-of-flight method, the beam profile as well as beam current were also measured. The beam's accelerating voltage was calculated by SRIM code in order to implant ions on the required film‘s depth. Tin ions were implanted into GST films at 40 kV accelerating voltage. Effect of Sn ion implantation (1 at. %) on the electrical properties of magnetron GST thin films was investigated.
*S.Barabin, V.Batalin, A.Kozlov, T.Kulevoy, et.al., Multifunctional Test-Bench for Heavy Ion Sources, Proceedings DIPAC 2003, Mainz, Germany, p.158. 		 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-TUPSA41  
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