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TY - CONF AU - Sitnikov, A. AU - Dronova, D.A. AU - Fedin, P.A. AU - Kozlov, A.V. AU - Kozyukhin, S. A. AU - Kulevoy, T. AU - Lazarenko, P. I. AU - Selesnev, D.N. AU - Sherchenkov, A. AU - Yakubov, A.O. ED - Kuzin, Maksim V. ED - Schaa, Volker RW TI - Effect of Tin Ion Implantation on the Properties of Amorphous Ge2Sb2Te5 Thin Films J2 - Proc. of RUPAC2018, Protvino, Russia, 01-05 October 2018 C1 - Protvino, Russia T2 - Russian Particle Accelerator Conference T3 - 26 LA - english AB - Alloys along the quasi-binary line between Sb2Te3 and GeTe with compositions (GeTe)m(Sb2Te3)n, in particular Ge2Sb2Te5, have been intensely studied and are used in the state-of-the-art PCM devices. However, properties of this thin film materials are not optimal and should be improved. In this work, we investigated the effect of tin ion implantation on the properties of amorphous Ge2Sb2Te5 thin films. The Sn ion implantation was done on Multipurpose Test Bench (MTB)* at NRC "Kurchatov Institute"-ITEP. The MTB consists of MEVVA type ion source, electrostatic focusing system, the system of current and beam profile measurements. The charge spectrum of the Sn beam was measured by the time-of-flight method, the beam profile as well as beam current were also measured. The beam's accelerating voltage was calculated by SRIM code in order to implant ions on the required film‘s depth. Tin ions were implanted into GST films at 40 kV accelerating voltage. Effect of Sn ion implantation (1 at. %) on the electrical properties of magnetron GST thin films was investigated. PB - JACoW Publishing CP - Geneva, Switzerland SP - 230 EP - 232 KW - target KW - ion-source KW - electron KW - ECR KW - laser DA - 2018/11 PY - 2018 SN - 978-3-95450-197-7 DO - 10.18429/JACoW-RUPAC2018-TUPSA41 UR - http://jacow.org/rupac2018/papers/tupsa41.pdf ER -