RUPAC2018 - List of Authors (Kozyukhin, S. A.)

Paper	Title	Page
TUPSA41	Effect of Tin Ion Implantation on the Properties of Amorphous Ge2Sb2Te5 Thin Films	230
	A. Sitnikov, P.A. Fedin, A.V. Kozlov, T. Kulevoy, D.N. Selesnev ITEP, Moscow, Russia D.A. Dronova, P. I. Lazarenko, A. Sherchenkov, A.O. Yakubov National Research University of Electronic Technology, Moscow, Russia S. A. Kozyukhin Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia
	Funding: This study was supported by RFBR (project 17-03-00450). Alloys along the quasi-binary line between Sb2Te3 and GeTe with compositions (GeTe)m(Sb2Te3)n, in particular Ge2Sb2Te5, have been intensely studied and are used in the state-of-the-art PCM devices. However, properties of this thin film materials are not optimal and should be improved. In this work, we investigated the effect of tin ion implantation on the properties of amorphous Ge2Sb2Te5 thin films. The Sn ion implantation was done on Multipurpose Test Bench (MTB)* at NRC "Kurchatov Institute"-ITEP. The MTB consists of MEVVA type ion source, electrostatic focusing system, the system of current and beam profile measurements. The charge spectrum of the Sn beam was measured by the time-of-flight method, the beam profile as well as beam current were also measured. The beam's accelerating voltage was calculated by SRIM code in order to implant ions on the required film‘s depth. Tin ions were implanted into GST films at 40 kV accelerating voltage. Effect of Sn ion implantation (1 at. %) on the electrical properties of magnetron GST thin films was investigated. *S.Barabin, V.Batalin, A.Kozlov, T.Kulevoy, et.al., Multifunctional Test-Bench for Heavy Ion Sources, Proceedings DIPAC 2003, Mainz, Germany, p.158.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-TUPSA41
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Paper

Title

Page

Effect of Tin Ion Implantation on the Properties of Amorphous Ge2Sb2Te5 Thin Films

230

A. Sitnikov, P.A. Fedin, A.V. Kozlov, T. Kulevoy, D.N. Selesnev
ITEP, Moscow, Russia
D.A. Dronova, P. I. Lazarenko, A. Sherchenkov, A.O. Yakubov
National Research University of Electronic Technology, Moscow, Russia
S. A. Kozyukhin
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia

Funding: This study was supported by RFBR (project 17-03-00450).
Alloys along the quasi-binary line between Sb2Te3 and GeTe with compositions (GeTe)m(Sb2Te3)n, in particular Ge2Sb2Te5, have been intensely studied and are used in the state-of-the-art PCM devices. However, properties of this thin film materials are not optimal and should be improved. In this work, we investigated the effect of tin ion implantation on the properties of amorphous Ge2Sb2Te5 thin films. The Sn ion implantation was done on Multipurpose Test Bench (MTB)* at NRC "Kurchatov Institute"-ITEP. The MTB consists of MEVVA type ion source, electrostatic focusing system, the system of current and beam profile measurements. The charge spectrum of the Sn beam was measured by the time-of-flight method, the beam profile as well as beam current were also measured. The beam's accelerating voltage was calculated by SRIM code in order to implant ions on the required film‘s depth. Tin ions were implanted into GST films at 40 kV accelerating voltage. Effect of Sn ion implantation (1 at. %) on the electrical properties of magnetron GST thin films was investigated.
*S.Barabin, V.Batalin, A.Kozlov, T.Kulevoy, et.al., Multifunctional Test-Bench for Heavy Ion Sources, Proceedings DIPAC 2003, Mainz, Germany, p.158.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-TUPSA41

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)