RUPAC2018 - List of Authors (Kozlov, A.V.)

Paper	Title	Page
TUPSA29	Emittance Measurement on Krion-6T Ion Source by Pepper-Pot Method	207
	S.V. Barabin, A.V. Kozlov, T. Kulevoy, D.A. Liakin, A.Y. Lukashin, D.N. Selesnev ITEP, Moscow, Russia E.D. Donets, E.E. Donets JINR, Dubna, Moscow Region, Russia
	The Krion-6T ion source is an electron string ion source (ESIS) of multicharged ions. It will be used as an ion source for the heavy ion linac at the NICA project, but has been tested on an existing injection facility - Alvarez-type linac LU-20 with new RFQ type fore-injector. The transverse emittance measurements were carried out on the initial part of channel (IPC) of the low energy beam transport (LEBT) channel, between the ion source and RFQ fore-injector by pepper-pot method. Beams of multicharged Argon and Xenon ions are observed. Measurements of the profile and emittance were performed over several energies for each type of ions. The results of the measurement are presented, and some points of emittance calculations are considered.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-TUPSA29
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TUPSA41	Effect of Tin Ion Implantation on the Properties of Amorphous Ge2Sb2Te5 Thin Films	230
	A. Sitnikov, P.A. Fedin, A.V. Kozlov, T. Kulevoy, D.N. Selesnev ITEP, Moscow, Russia D.A. Dronova, P. I. Lazarenko, A. Sherchenkov, A.O. Yakubov National Research University of Electronic Technology, Moscow, Russia S. A. Kozyukhin Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia
	Funding: This study was supported by RFBR (project 17-03-00450). Alloys along the quasi-binary line between Sb2Te3 and GeTe with compositions (GeTe)m(Sb2Te3)n, in particular Ge2Sb2Te5, have been intensely studied and are used in the state-of-the-art PCM devices. However, properties of this thin film materials are not optimal and should be improved. In this work, we investigated the effect of tin ion implantation on the properties of amorphous Ge2Sb2Te5 thin films. The Sn ion implantation was done on Multipurpose Test Bench (MTB)* at NRC "Kurchatov Institute"-ITEP. The MTB consists of MEVVA type ion source, electrostatic focusing system, the system of current and beam profile measurements. The charge spectrum of the Sn beam was measured by the time-of-flight method, the beam profile as well as beam current were also measured. The beam's accelerating voltage was calculated by SRIM code in order to implant ions on the required film‘s depth. Tin ions were implanted into GST films at 40 kV accelerating voltage. Effect of Sn ion implantation (1 at. %) on the electrical properties of magnetron GST thin films was investigated. *S.Barabin, V.Batalin, A.Kozlov, T.Kulevoy, et.al., Multifunctional Test-Bench for Heavy Ion Sources, Proceedings DIPAC 2003, Mainz, Germany, p.158.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-TUPSA41
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TUPSA42	The Irradiation Technique at SIRMAT
	S.L. Andrianov, N.A. Iskandarov, A.V. Kozlov, R.P. Kuibeda, T. Kulevoy, A.A. Nikitin, S.V. Rogozhkin ITEP, Moscow, Russia
	In the NRC "Kurchatov Institute" - ITEP the experimental research of new promising materials for nuclear technology by using the heavy ion beams is underway at the Stand of Irradiation Reactor MATerials (SIRMAT). The SIRMAT allows irradiation of the investigated samples by metal ion beams with energies up to 100z keV, where z is the ion charge. Local analysis of the irradiated samples is carried out by atomic-probe tomography. The work presents the main parameters of the SORMAT installation and the method of irradiation, as well as the results of experimental work for 2017-2018. * S.L. Andrianov i dr. "Stend oblucheniya reaktornykh materialov". Izvestiya Vyschikh Uchebnykh Zavdeniy. T. 59, 9/3 p.225
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THPSC17	Emittance Measurements of Polarized Ion Beams Using a Pepper-Pot Emittance Meter	440
	S.V. Barabin, A.V. Kozlov, T. Kulevoy, D.A. Liakin, A.Y. Lukashin, D.N. Selesnev ITEP, Moscow, Russia A. Belov RAS/INR, Moscow, Russia V.V. Fimushkin JINR, Dubna, Moscow Region, Russia
	An Source of Polarized Ions (SPI), developed at JINR, produces pulsed beams of polarized protons and deuterons for NUCLOTRON accelerator. The accelerated polarized ion beams will be injected into future NICA collider. In order to reconcile requirements of a RFQ fore-injector of the Alvarez type linear accelerator LU-20, it is necessary to measure a transverse emittance of the ion beams produced by the SPI. The emittance of beams of polarized deuterons and polarized protons was measured by the pepper-pot method. The results of measurements of the emittance and profile of the polarized ion beams are presented.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-THPSC17
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THPSC18	Pepper-Pot Emittance Metasurements	443
	S.V. Barabin, A.V. Kozlov, T. Kulevoy, D.A. Liakin, A.Y. Lukashin, D.N. Selesnev ITEP, Moscow, Russia
	The pepper-pot emittance measuring device was developed to determine the parameters of the ion source beam. It includes a "pepper-pot" mask, a scintillation screen, a charge-coupled device (CCD) recorder, a personal computer (PC), software for data processing, calculation of beam profile and emittance. Measurements of emittance by pepper-pot method have been successfully carried out on several ion sources, at ITEP and JINR. The pepper-pot measurement method, the emittance meter design, and the emittance calculation technics are presented.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-THPSC18
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Paper

Title

Page

Emittance Measurement on Krion-6T Ion Source by Pepper-Pot Method

207

S.V. Barabin, A.V. Kozlov, T. Kulevoy, D.A. Liakin, A.Y. Lukashin, D.N. Selesnev
ITEP, Moscow, Russia
E.D. Donets, E.E. Donets
JINR, Dubna, Moscow Region, Russia

The Krion-6T ion source is an electron string ion source (ESIS) of multicharged ions. It will be used as an ion source for the heavy ion linac at the NICA project, but has been tested on an existing injection facility - Alvarez-type linac LU-20 with new RFQ type fore-injector. The transverse emittance measurements were carried out on the initial part of channel (IPC) of the low energy beam transport (LEBT) channel, between the ion source and RFQ fore-injector by pepper-pot method. Beams of multicharged Argon and Xenon ions are observed. Measurements of the profile and emittance were performed over several energies for each type of ions. The results of the measurement are presented, and some points of emittance calculations are considered.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-TUPSA29

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TUPSA41

Effect of Tin Ion Implantation on the Properties of Amorphous Ge2Sb2Te5 Thin Films

230

A. Sitnikov, P.A. Fedin, A.V. Kozlov, T. Kulevoy, D.N. Selesnev
ITEP, Moscow, Russia
D.A. Dronova, P. I. Lazarenko, A. Sherchenkov, A.O. Yakubov
National Research University of Electronic Technology, Moscow, Russia
S. A. Kozyukhin
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia

Funding: This study was supported by RFBR (project 17-03-00450).
Alloys along the quasi-binary line between Sb2Te3 and GeTe with compositions (GeTe)m(Sb2Te3)n, in particular Ge2Sb2Te5, have been intensely studied and are used in the state-of-the-art PCM devices. However, properties of this thin film materials are not optimal and should be improved. In this work, we investigated the effect of tin ion implantation on the properties of amorphous Ge2Sb2Te5 thin films. The Sn ion implantation was done on Multipurpose Test Bench (MTB)* at NRC "Kurchatov Institute"-ITEP. The MTB consists of MEVVA type ion source, electrostatic focusing system, the system of current and beam profile measurements. The charge spectrum of the Sn beam was measured by the time-of-flight method, the beam profile as well as beam current were also measured. The beam's accelerating voltage was calculated by SRIM code in order to implant ions on the required film‘s depth. Tin ions were implanted into GST films at 40 kV accelerating voltage. Effect of Sn ion implantation (1 at. %) on the electrical properties of magnetron GST thin films was investigated.
*S.Barabin, V.Batalin, A.Kozlov, T.Kulevoy, et.al., Multifunctional Test-Bench for Heavy Ion Sources, Proceedings DIPAC 2003, Mainz, Germany, p.158.

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reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-TUPSA41

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TUPSA42

The Irradiation Technique at SIRMAT

S.L. Andrianov, N.A. Iskandarov, A.V. Kozlov, R.P. Kuibeda, T. Kulevoy, A.A. Nikitin, S.V. Rogozhkin
ITEP, Moscow, Russia

In the NRC "Kurchatov Institute" - ITEP the experimental research of new promising materials for nuclear technology by using the heavy ion beams is underway at the Stand of Irradiation Reactor MATerials (SIRMAT). The SIRMAT allows irradiation of the investigated samples by metal ion beams with energies up to 100*z keV, where z is the ion charge*. Local analysis of the irradiated samples is carried out by atomic-probe tomography. The work presents the main parameters of the SORMAT installation and the method of irradiation, as well as the results of experimental work for 2017-2018.
* S.L. Andrianov i dr. "Stend oblucheniya reaktornykh materialov". Izvestiya Vyschikh Uchebnykh Zavdeniy. T. 59, 9/3 p.225

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THPSC17

Emittance Measurements of Polarized Ion Beams Using a Pepper-Pot Emittance Meter

440

S.V. Barabin, A.V. Kozlov, T. Kulevoy, D.A. Liakin, A.Y. Lukashin, D.N. Selesnev
ITEP, Moscow, Russia
A. Belov
RAS/INR, Moscow, Russia
V.V. Fimushkin
JINR, Dubna, Moscow Region, Russia

An Source of Polarized Ions (SPI), developed at JINR, produces pulsed beams of polarized protons and deuterons for NUCLOTRON accelerator. The accelerated polarized ion beams will be injected into future NICA collider. In order to reconcile requirements of a RFQ fore-injector of the Alvarez type linear accelerator LU-20, it is necessary to measure a transverse emittance of the ion beams produced by the SPI. The emittance of beams of polarized deuterons and polarized protons was measured by the pepper-pot method. The results of measurements of the emittance and profile of the polarized ion beams are presented.

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reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-THPSC17

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THPSC18

Pepper-Pot Emittance Metasurements

443

S.V. Barabin, A.V. Kozlov, T. Kulevoy, D.A. Liakin, A.Y. Lukashin, D.N. Selesnev
ITEP, Moscow, Russia

The pepper-pot emittance measuring device was developed to determine the parameters of the ion source beam. It includes a "pepper-pot" mask, a scintillation screen, a charge-coupled device (CCD) recorder, a personal computer (PC), software for data processing, calculation of beam profile and emittance. Measurements of emittance by pepper-pot method have been successfully carried out on several ion sources, at ITEP and JINR. The pepper-pot measurement method, the emittance meter design, and the emittance calculation technics are presented.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-RUPAC2018-THPSC18

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