Author: Nikiforov, K.A.
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TUPSA067
 Field Emission System Based on Silicon Carbide  
 
  • K.A. Nikiforov
    LETI, Saint-Petersburg, Russia
  • N.V. Egorov, K.A. Nikiforov
    St. Petersburg State University, St. Petersburg, Russia
  
  Funding: The work has been funded by Russian Science Foundation (Grant No. 15-19-30022), SPETU 'LETI'.
Silicon carbide field emission arrays are very promising due to material's unique combination of high refractoriness and high electrical conductivity required for stable operation at high temperatures and ion bombardment. This presentation discusses the problems of development of field electron emission system based on silicon carbide. Computer modeling of the field emission array including dependence of current characteristics on its geometry is considered. Development and testing of methods of experimental assessment of variance of speed in electron current, performing tests on lab samples of field emission array is presented. Development of methods of experimental assessment of temperature of field emission array and other problems are discussed. 		 
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TUPSA065
 Mathematical Modelling of Field Emission Cathode  
 
  • K.A. Nikiforov
    St. Petersburg State University, St. Petersburg, Russia
  
  Mathematical model of system based on field emission array cathode is considered. Microemitters of field emission array are arranged in a rectangular lattice and have cylindrical shape with sharp top margins. Mathematical modelling and computer simulation is performed for analysis of static characteristics of emission system as well as macro- and microscale electrostatic field distribution.  
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TUPSA066
 Multi-Scale Simulation of Field Emission Electron Sources  
 
  • K.A. Nikiforov, N.V. Egorov
    St. Petersburg State University, St. Petersburg, Russia
  
  This presentation is devoted to the problems of mathematical modeling of systems based on field electron emission. It presents both classical and quantum approaches in modeling at different scales field emission electron sources as structure element of vacuum electronics and micro, nanoelectronics systems. Multiscale models, combining together algorithms of different nature describing emission systems on different hierarchical levels - from nano and meso toμand macro - are applicable to the development of effective systems based on field emission electron sources.  
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