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TY - UNPB AU - Nikiforov, K.A. AU - Egorov, N.V. ED - Kuzin, Maxim ED - Schaa, Volker RW TI - Field Emission System Based on Silicon Carbide J2 - Proc. of RuPAC2016, St. Petersburg, Russia, November 21-25, 2016 C1 - St. Petersburg, Russia T2 - Russian Particle Accelerator Conference T3 - 25 LA - english AB - Silicon carbide field emission arrays are very promising due to material's unique combination of high refractoriness and high electrical conductivity required for stable operation at high temperatures and ion bombardment. This presentation discusses the problems of development of field electron emission system based on silicon carbide. Computer modeling of the field emission array including dependence of current characteristics on its geometry is considered. Development and testing of methods of experimental assessment of variance of speed in electron current, performing tests on lab samples of field emission array is presented. Development of methods of experimental assessment of temperature of field emission array and other problems are discussed. PB - JACoW CP - Geneva, Switzerland ER -