RuPAC2016 - List of Authors (Egorov, N.V.)

Paper

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Page

The Infinitely Thin Field Emitter Mathematical Modeling

342

E.M. Vinogradova
Saint-Petersburg State University, Saint-Petersburg, Russia
N.V. Egorov
St. Petersburg State University, St. Petersburg, Russia
E.V. Kalaturskaja
Saint Petersburg State University, Saint Petersburg, Russia

In this work an axisymmetric diode electron-optical system based on a field emitter is simulated. The field emitter in the form of a thin filament of finite length is located on the flat substrate with the dielectric layer. The anode is a plane. The electrostatic potential distribution was found in an analytical form - in the form of Fourier-Bessel series in the whole area of the system under investigation. The coefficients of Fourier-Bessel series are the solution of the system of linear equations with constant coefficients.

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TUPSA066

Multi-Scale Simulation of Field Emission Electron Sources

K.A. Nikiforov, N.V. Egorov
St. Petersburg State University, St. Petersburg, Russia

This presentation is devoted to the problems of mathematical modeling of systems based on field electron emission. It presents both classical and quantum approaches in modeling at different scales field emission electron sources as structure element of vacuum electronics and micro, nanoelectronics systems. Multiscale models, combining together algorithms of different nature describing emission systems on different hierarchical levels - from nano and meso toμand macro - are applicable to the development of effective systems based on field emission electron sources.

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TUPSA067

Field Emission System Based on Silicon Carbide

K.A. Nikiforov
LETI, Saint-Petersburg, Russia
N.V. Egorov, K.A. Nikiforov
St. Petersburg State University, St. Petersburg, Russia

Funding: The work has been funded by Russian Science Foundation (Grant No. 15-19-30022), SPETU 'LETI'.
Silicon carbide field emission arrays are very promising due to material's unique combination of high refractoriness and high electrical conductivity required for stable operation at high temperatures and ion bombardment. This presentation discusses the problems of development of field electron emission system based on silicon carbide. Computer modeling of the field emission array including dependence of current characteristics on its geometry is considered. Development and testing of methods of experimental assessment of variance of speed in electron current, performing tests on lab samples of field emission array is presented. Development of methods of experimental assessment of temperature of field emission array and other problems are discussed.

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Paper	Title	Page
TUPSA064	The Infinitely Thin Field Emitter Mathematical Modeling	342
	E.M. Vinogradova Saint-Petersburg State University, Saint-Petersburg, Russia N.V. Egorov St. Petersburg State University, St. Petersburg, Russia E.V. Kalaturskaja Saint Petersburg State University, Saint Petersburg, Russia
	In this work an axisymmetric diode electron-optical system based on a field emitter is simulated. The field emitter in the form of a thin filament of finite length is located on the flat substrate with the dielectric layer. The anode is a plane. The electrostatic potential distribution was found in an analytical form - in the form of Fourier-Bessel series in the whole area of the system under investigation. The coefficients of Fourier-Bessel series are the solution of the system of linear equations with constant coefficients.
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TUPSA066	Multi-Scale Simulation of Field Emission Electron Sources
	K.A. Nikiforov, N.V. Egorov St. Petersburg State University, St. Petersburg, Russia
	This presentation is devoted to the problems of mathematical modeling of systems based on field electron emission. It presents both classical and quantum approaches in modeling at different scales field emission electron sources as structure element of vacuum electronics and micro, nanoelectronics systems. Multiscale models, combining together algorithms of different nature describing emission systems on different hierarchical levels - from nano and meso toμand macro - are applicable to the development of effective systems based on field emission electron sources.
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TUPSA067	Field Emission System Based on Silicon Carbide
	K.A. Nikiforov LETI, Saint-Petersburg, Russia N.V. Egorov, K.A. Nikiforov St. Petersburg State University, St. Petersburg, Russia
	Funding: The work has been funded by Russian Science Foundation (Grant No. 15-19-30022), SPETU 'LETI'. Silicon carbide field emission arrays are very promising due to material's unique combination of high refractoriness and high electrical conductivity required for stable operation at high temperatures and ion bombardment. This presentation discusses the problems of development of field electron emission system based on silicon carbide. Computer modeling of the field emission array including dependence of current characteristics on its geometry is considered. Development and testing of methods of experimental assessment of variance of speed in electron current, performing tests on lab samples of field emission array is presented. Development of methods of experimental assessment of temperature of field emission array and other problems are discussed.
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)