RuPAC2016 - List of Authors (Bondarenko, T.V.)

Paper

Title

Page

Commissioning and First Tests of the New Standing Wave 10 Mev Electron Accelerator

173

S.M. Polozov, D.B. Bazyl, T.V. Bondarenko, M. Gusarova, Yu.D. Kliuchevskaia, M.V. Lalayan, V.I. Rashchikov, E.A. Savin
MEPhI, Moscow, Russia
M.I. Demsky, A.A. Eliseev, V.V. Krotov, D.E. Trifonov
CORAD Ltd., St. Petersburg, Russia

A new linear electron accelerator for industrial applications was developed by the joint team of CORAD and MEPhI. It is based on conventional biperiodical accelerating structure for energy range from 7.5 to 10 MeV and beam power up to 20 kW. The use of modern methods and codes for beam dynamics simulation, raised coupling coefficient and group velocity of SW biperiodic accelerating structure allowed to reach high pulse power utilization and obtain high efficiency. The first two accelerators with the new structure have been installed and tested.

Slides TUCASH02 [4.924 MB]

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TUPSA025

First Results of Beam Dynamics Simulation in electron injector linac for FCC-ee

264

S.M. Polozov, T.V. Bondarenko
MEPhI, Moscow, Russia

New high-energy frontier project FCC is now under development at CERN. It is planed that all three modes as ee, hh and eh will be available for FCC. New injection system for FCC-ee is planned to consist of new ~ 2 GeV electron linac and electron-positron converter. Two possible layouts for further beam acceleration are discussed. The high-energy 14 GeV linac is the first layout and the booster synchrotron is the second one. Pre-injector linac design will have two regimes: ~250 pC bunches for injection and ~6 nC bunches for e⁻/e⁺ conversion. In the second case we will have extreme parameters: bunch charge up to 6 nC in 10 ps, up to 10 bunches per pulse and the pulse repetition rate up to 100 Hz. Such beam parameters lead to significant design difficulties caused by very high influence of Coulomb field in the near-cathode region and high peak beam loading. First results of beam dynamics simulation in FCC-ee injection linac and near-cathode dynamics problems are discussed in the report.

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TUCBSH01

Next Generation High Power Solid-State RF Sources

G.B. Sharkov, T.V. Bondarenko, A.A. Krasnov, S.A. Polikhov
NIITFA, Moscow, Russia

Solid-state RF power amplifier (SSPA) technology has developed significantly over recent years. Powers of hundreds of kilowatts are being achieved, driven by the developments of LDMOS and other transistor technologies. The price and size of SSPA still correlate with the output power, which is not the case for vacuum tube based devices. In order to be competitive with vacuum tubes at higher levels of power and frequency, SSPA's should be designed to be more compact and cheaper than current offerings, using the high efficiency and reliability of modern transistors to produce highly available amplifier systems. The scalability of SSPA output power is achieved by a modular architecture based on several ~1kW transistors; this gives an important advantage over vacuum tubes. In order to meet challenging demands for high power, efficient, reliable, compact and cost effective RF amplifiers, the next generation architecture of SSPA is employed and single design for various frequencies and power is proposed.

Slides TUCBSH01 [7.332 MB]

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Paper	Title	Page
TUCASH02	Commissioning and First Tests of the New Standing Wave 10 Mev Electron Accelerator	173
	S.M. Polozov, D.B. Bazyl, T.V. Bondarenko, M. Gusarova, Yu.D. Kliuchevskaia, M.V. Lalayan, V.I. Rashchikov, E.A. Savin MEPhI, Moscow, Russia M.I. Demsky, A.A. Eliseev, V.V. Krotov, D.E. Trifonov CORAD Ltd., St. Petersburg, Russia
	A new linear electron accelerator for industrial applications was developed by the joint team of CORAD and MEPhI. It is based on conventional biperiodical accelerating structure for energy range from 7.5 to 10 MeV and beam power up to 20 kW. The use of modern methods and codes for beam dynamics simulation, raised coupling coefficient and group velocity of SW biperiodic accelerating structure allowed to reach high pulse power utilization and obtain high efficiency. The first two accelerators with the new structure have been installed and tested.
	Slides TUCASH02 [4.924 MB]
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TUPSA025	First Results of Beam Dynamics Simulation in electron injector linac for FCC-ee	264
	S.M. Polozov, T.V. Bondarenko MEPhI, Moscow, Russia
	New high-energy frontier project FCC is now under development at CERN. It is planed that all three modes as ee, hh and eh will be available for FCC. New injection system for FCC-ee is planned to consist of new ~ 2 GeV electron linac and electron-positron converter. Two possible layouts for further beam acceleration are discussed. The high-energy 14 GeV linac is the first layout and the booster synchrotron is the second one. Pre-injector linac design will have two regimes: ~250 pC bunches for injection and ~6 nC bunches for e⁻/e⁺ conversion. In the second case we will have extreme parameters: bunch charge up to 6 nC in 10 ps, up to 10 bunches per pulse and the pulse repetition rate up to 100 Hz. Such beam parameters lead to significant design difficulties caused by very high influence of Coulomb field in the near-cathode region and high peak beam loading. First results of beam dynamics simulation in FCC-ee injection linac and near-cathode dynamics problems are discussed in the report.
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TUCBSH01	Next Generation High Power Solid-State RF Sources
	G.B. Sharkov, T.V. Bondarenko, A.A. Krasnov, S.A. Polikhov NIITFA, Moscow, Russia
	Solid-state RF power amplifier (SSPA) technology has developed significantly over recent years. Powers of hundreds of kilowatts are being achieved, driven by the developments of LDMOS and other transistor technologies. The price and size of SSPA still correlate with the output power, which is not the case for vacuum tube based devices. In order to be competitive with vacuum tubes at higher levels of power and frequency, SSPA's should be designed to be more compact and cheaper than current offerings, using the high efficiency and reliability of modern transistors to produce highly available amplifier systems. The scalability of SSPA output power is achieved by a modular architecture based on several ~1kW transistors; this gives an important advantage over vacuum tubes. In order to meet challenging demands for high power, efficient, reliable, compact and cost effective RF amplifiers, the next generation architecture of SSPA is employed and single design for various frequencies and power is proposed.
	Slides TUCBSH01 [7.332 MB]
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