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| TPAE067 | Femtosecond Electron Diffraction and its Application for Beam Characterization at the PAL | 3721 |
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| Electron diffraction is widely used in electron microscopy to obtain ultrahigh magnification factor, or crystallography to determine the internal structure of the molecule. High energy electron (MeV) has been used to probe the solid state thick sample, now being explored for femto-second electron diffraction (FED) to determine the transient structure of the molecule. We are proposing to perform FED using a photocathode RF gun at the Pohang Accelerator Laboratory (PAL), and develop an advanced electron beam diagnostic tool based on the electron diffraction. In this paper we will study how the diffraction pattern can be used to extract the information on the beam’s divergence. With a well-known sample, such as aluminum foil, whose internal structure is predetermined, the diffraction pattern for both single electron and the electron beam with a given divergence distribution can be calculated. Our proposed technique shows great potential of electron diffraction in beam divergence characterization. An experiment to verify the practicality of this method is under preparation and will be carried out at the proposed high brightness R&D facility at the PAL) in the near future. | ||
| TOAB003 | First Results from the DUV-FEL Upgrade at BNL | |
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The DUV-FEL at BNL is the world’s only facility dedicated to laser-seeded FEL R&D and its applications. Tremendous progress was made in both HGHG FEL and its applications in the last couple years.*,** In response to the requests of many users to study chemical science at the facility, the DUV-FEL linac was upgraded from 200 to 300 MeV to enable the HGHG FEL to produce 100 uJ pulses of 100 nm light. This will establish the DUV FEL as a premier user facility for ultraviolet radiation and enable state-of-the-art gas phase photochemistry research. The upgraded facility will also make possible key R&D experiments such as higher harmonic HGHG (n>5) that would lay the groundwork for future X-ray FEL based on HGHG. The upgraded HGHG FEL will operate at the 4th harmonic with the seed laser at either 800 nm or 400nm. The increase of the electron beam energy will be accomplished by installing a 5th linac cavity and two 45 MW klystrons. New HGHG modulator and dispersion sections vacuum chambers will be manufactured to accommodate new matching optics and 8th harmonic HGHG. The initial results of the DUV-FEL upgrade and other FEL and accelerator physics R&D opportunities will be discussed.
*L.H. Yu et al., Phy. Rev. Lett. 91, 074801-1 (2003). **W. Li et al., Phy. Rev. Lett. 92, 083002-1(2004). |
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| WPAP021 | Status of PPI (Pohang Photo-Injector) for PAL XFEL | 1733 |
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Funding: Supported by the POSCO and the MOST, Korea. A X-Ray Free Electron Laser (XFEL) project based on the Self-Amplified Spontaneous Emission (SASE) is under progress at the Pohang Accelerator Laboratory (PAL). One of the critical R&D for the PAL XFEL* is to develop the Pohang Photo-Injector (PPI) which is required to deliver electron beams with normalized emittance < 1.5 mm-mrad. In order to achieve the required beam quality with high stability and reliability, we will use photocathode with quantum efficiency > 0.1 % and long lifetime. This will greatly lessen the laser energy requirement for producing flat-top UV pulses, and open the possibility of using only regenerative amplifiers (RGAs) to drive the photocathode RF gun. The RGAs can produce mJs output with much better stability than multi-pass amplifiers. Both the Cs2Te and Mg are under consideration for the possible photo-cathode. To demonstrate the suitability of the Mg and Cs2Te for the future 4th generation light source application, an improved BNL-type S-band RF gun with a high-performance load-lock system will be developed for the PPI. In this article, we present the design concept of the PPI, the expected performance, and report on its development status. *J.S. Oh, S.J. Park et al., "0.3-nm SASE-FEL at PAL," NIM A528, 582 (2004); S.J. Park, J.S. Oh et al., "Design Study of Low-Emittance Injector for SASE XFEL at Pohang Accelerator Laboratory," FEL2004, Italy, 2004. |
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| WPAP022 | Measurements of Transverse Emittance for RF Photocathode Gun at the PAL | 1760 |
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Funding: Supported by the POSCO and the MOST, Korea. A BNL GUN-IV type RF photo-cathode gun is under fabrication for use in the FIR (Far Infra-Red) facility being built at the Pohang Accelerator Laboratory (PAL). Performance test of the gun will include the measurement of transverse emittance profile along the longitudinal direction. Successful measurement of the emittance profile will provide powerful tool for the commissioning of the 4GLS (4th generation light source) injectors based on the emittance compensation principle. We are going to achieve this withthe use of pepper-pot based emittance meters that can be moved along the longitudinal direction. In this article, we present design considerations on the emittance meter with the resolution of 1 mm mrad. |
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| RPAE059 | Design of 3 GeV Booster for NSLS-II | 3473 |
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| We present preliminary design of full energy booster for NSLS-II. In the paper we analyze single- and multi-bunch modes of the booster operations. The booster lattice consists of 24 TME cells with two dispersion suppressors. Initial design of the magnets, power supply specifications, Eddy current contribution to the booster chromaticity are discussed. | ||
| MOPB008 | Temporal E-Beam Shaping in an S-Band Accelerator | 642 |
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Funding: This work was supported by U.S. Department of Energy, Office of Basic Energy Sciences, under Contracts DE-AC02-98CH10886 and DE-AC03-76SF00515. New short-wavelength SASE light sources will require very bright electron beams, brighter in some cases than is now possible. One method for improving brightness involves the careful shaping of the electron bunch to control the degrading effects of its space charge forces. We study this experimentally in an S-band system, by using an acousto-optical programmable dispersive filter to shape the photocathode laser pulse that drives the RF photoinjector. We report on the efficacy of shaping from the IR through the UV, and the effects of shaping on the electron beam dynamics. |
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| RPAE056 | NSLS II: The Future of the NSLS | 3345 |
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Funding: Under Contract with the United States Department of Energy Contract Number DE-AC02-98CH10886 The National Synchrotron Light Source at BNL was the first dedicated light source facility and it has now operated for more than 20 years. During this time the user community has grown to more than 2400 users annually. To insure that this vibrant user community has access to the highest quality photon beams, the NSLS is pursuing the design of a new ultra-high brightness (~10E21) electron storage ring, tailored to the 0.3-20 KeV photon energy range. We present our preliminary design and review the critical accelerator physics design issues. |
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| RPAE058 | NSLS-II Injection Concept | 3408 |
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| Currently the facility upgrade project is under progress at the NSLS (Brookhaven National Laboratory). The goal of NSLS-II is a 3 GeV ultra-low emittance storage ring that will provide three orders of magnitude increase in brightness over the present NSLS X-ray beamlines. The low emittance of the high brightness ring lattice results in quite short lifetimes, which makes operation in top-off injection mode a necessity. The NSLS-II injection system must be able to provide an electron beam at the high repetition rate and with good injection efficiency. In this paper we present a concept of the NSLS-II injection system and discuss conditions and constraints for the injector design. Various injection system parameters are estimated from the point of view of SR user demand. |