• G.A. Mulhollan, J.C.B. Bierman
  Saxet, Austin, Texas
• A. Brachmann, J.E. Clendenin, E.G. Garwin, R.E. Kirby, D.-A.L. Luh, T.V.M. Maruyama
  SLAC, Menlo Park, California
• R.X.P. Prepost
  UW-Madison/PD, Madison, Wisconsin

Spin-polarized electrons are commonly used in high energy physics. Future work will benefit from greater polarization. Polarizations approaching 90% have been achieved at the expense of yield. The primary paths to higher polarization are material design and electron transport. Our work addresses the latter. Photoexcited electrons may be preferentially emitted or suppressed by an electric field applied across the active region. We are tuning this forward bias for maximum polarization and yield, together with other parameters, e.g., doping profile Preliminary measurements have been carried out on bulk GaAs. As expected, the yield change far from the bandgap is quite large. The bias is applied to the bottom (non-activated) side of the cathode so that the accelerating potential as measured with respect to the ground potential chamber walls is unchanged for different front-to-back cathode bias values. For a bias which enhances emission, the yield nearly doubles. For a bias which diminishes emission, the yield is approximately one half of the zero bias case. The size of the bias to cause an appreciable effect is rather small reflecting the low drift kinetic energy in the zero bias case.