NAPAC2016 - List of Keywords (linear-collider)

Paper	Title	Other Keywords	Page
MOPOB44	Thyratron Replacement	ion, operation, klystron, network	162
	I. Roth, M.P.J. Gaudreau, M.K. Kempkes, M.G. Munderville, R.E. Simpson Diversified Technologies, Inc., Bedford, Massachusetts, USA
	Funding: *Work supported by US Department of Energy under contract DE-SC0011292 Semiconductor thyristors have long been used as a replacement for thyratrons in low power or long pulse RF systems. To date, however, such thyristor assemblies have not demonstrated the reliability needed for installation in short pulse, high peak power RF stations used with many pulsed electron accelerators. The fast rising current in a thyristor tends to be carried in a small region, rather than across the whole device, and this localized current concentration can cause a short circuit failure. An alternate solid-state device, the insulated-gate bipolar transistor (IGBT), can readily operate at the speed needed for the accelerator, but commercial IGBTs cannot handle the voltage and current required. It is, however, possible to assemble these devices in arrays to reach the required performance levels without sacrificing their inherent speed. Diversified Technologies, Inc. (DTI) has patented and refined the technology required to build these arrays of series-parallel connected switches. DTI is currently developing an affordable, reliable, form-fit-function replacement for the klystron modulator thyratrons at SLAC capable of pulsing at 360 kV, 420 A, 6μs, and 120 Hz.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-NAPAC2016-MOPOB44
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Paper

Title

Other Keywords

Page

MOPOB44

Thyratron Replacement

ion, operation, klystron, network

162

I. Roth, M.P.J. Gaudreau, M.K. Kempkes, M.G. Munderville, R.E. Simpson
Diversified Technologies, Inc., Bedford, Massachusetts, USA

Funding: *Work supported by US Department of Energy under contract DE-SC0011292
Semiconductor thyristors have long been used as a replacement for thyratrons in low power or long pulse RF systems. To date, however, such thyristor assemblies have not demonstrated the reliability needed for installation in short pulse, high peak power RF stations used with many pulsed electron accelerators. The fast rising current in a thyristor tends to be carried in a small region, rather than across the whole device, and this localized current concentration can cause a short circuit failure. An alternate solid-state device, the insulated-gate bipolar transistor (IGBT), can readily operate at the speed needed for the accelerator, but commercial IGBTs cannot handle the voltage and current required. It is, however, possible to assemble these devices in arrays to reach the required performance levels without sacrificing their inherent speed. Diversified Technologies, Inc. (DTI) has patented and refined the technology required to build these arrays of series-parallel connected switches. DTI is currently developing an affordable, reliable, form-fit-function replacement for the klystron modulator thyratrons at SLAC capable of pulsing at 360 kV, 420 A, 6μs, and 120 Hz.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-NAPAC2016-MOPOB44

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)