Author: Zhu, B.L.
Paper Title Page
TUPYP024
 Study of the TiZrV Getter Film Deposited on the Inner Surface of HEPS Undulator Vacuum Tube  
 
  • B.L. Zhu
    IHEP CSNS, Guangdong Province, People’s Republic of China
  
  The clean and sta­ble ul­tra-high vac­uum en­vi­ron­ment of the par­ti­cle ac­cel­er­a­tor stor­age ring can re­duce the beam loss caused by gas scat­ter­ing, which is the basis for the long-term sta­ble op­er­a­tion of the beam. The HEPS un­du­la­tor vac­uum sys­tem is a very small aper­ture el­lip­ti­cal pipe with an inner di­am­e­ter of 22×7 mm. In order to meet the re­quire­ments of ul­tra-high vac­uum of the nar­row-gap in­ser­tion de­vices vac­uum sys­tem, a non-evap­orable get­ter (NEG) film is de­posited on the inner wall of the tube. In this study, a mag­netron sput­ter­ing coat­ing sys­tem suit­able for de­posit­ing NEG films on the inner wall of a nar­row-gap el­lip­ti­cal pipe was de­signed and built, and TiZrV films were suc­cess­fully ob­tained on the inner wall of an el­lip­ti­cal pipe. The mi­crostruc­ture, de­po­si­tion rate, crys­tal struc­ture and chem­i­cal com­po­si­tion of TiZrV thin films were stud­ied by scan­ning elec­tron mi­croscopy, X-ray dif­frac­tion and X-ray pho­to­elec­tron spec­troscopy, re­spec­tively. The re­sults show that the TiZrV film has a colum­nar struc­ture and its crys­tal struc­ture is amor­phous. The atomic ratio of the three chem­i­cal el­e­ments in the TiZrV film is lo­cated in the low tem­per­a­ture ac­ti­va­tion re­gion.  
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THPPP041
 Design of HEPS Booster Synchronous Radiation Light Extraction System  
 
  • J.M. Liu, S.M. Liu, X.Y. Sun, B. Tan, P.C. Wang
    DNSC, Dongguan, People’s Republic of China
  • Y.S. Ma, D.C. Zhu
    IHEP, Beijing, People’s Republic of China
  • B.L. Zhu
    IHEP CSNS, Guangdong Province, People’s Republic of China
  
  The HEPS Booster syn­chro­nous ra­di­a­tion light ex­trac­tion sys­tem is a bend­ing mag­net source de­signed specif­i­cally for Booster beam size mon­i­tor, con­sist­ing of a vac­uum cham­ber, di­aphragm, and re­flec­tor. The func­tion of the sys­tem is to pro­vide spe­cific syn­chro­tron ra­di­a­tion light for the op­ti­cal imag­ing sys­tem to mea­sure the beam size. At pre­sent, the sys­tem has been suc­cess­fully man­u­fac­tured and in­stalled. This ar­ti­cle will in­tro­duce its de­sign, ther­mal analy­sis, and man­u­fac­tur­ing ac­cu­racy.  
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THPPP052 Design and Development of Coated Chamber for In-Air Insertion Devices 352
 
  • P.C. Wang, Y. Wang
    USTC/NSRL, Hefei, Anhui, People’s Republic of China
  • H. Dong, Y.S. Ma, Y.G. Wang, L. Zhang
    IHEP, Beijing, People’s Republic of China
  • J.M. Liu, S.M. Liu, X.Y. Sun
    DNSC, Dongguan, People’s Republic of China
  • B. Tan
    Institute of High Energy Physics, CAS, Guangdong, People’s Republic of China
  • B.L. Zhu
    IHEP CSNS, Guangdong Province, People’s Republic of China
  
  The in­ser­tion de­vices ¿ID¿is an im­por­tant guar­an­tee for fur­ther im­prov­ing the per­for­mance of the light source to meet the needs of dif­fer­ent users. For in-air ID (un­du­la­tor, wig­gler, etc.), the mag­netic struc­ture is in the air, and the vac­uum cham­ber is in the mid­dle of the mag­netic struc­ture to en­sure the nor­mal op­er­a­tion of the beam. In order to in­crease the mag­netic field strength, the mag­netic gap is gen­er­ally rel­a­tively small. Fac­tors such as small set­ting space, high pre­ci­sion, and low con­duc­tance all pose chal­lenges to the de­sign and pro­cess­ing of vac­uum cham­ber. This paper in­tro­duces the de­vel­op­ment process of the vac­uum cham­ber pro­to­type of the coat­ing type ID for the China ’s first dif­frac­tion-lim­ited light source HEPS. The si­mul­ta­ne­ous analy­sis and vac­uum pres­sure dis­tri­b­u­tion cal­cu­la­tion of the ID are car­ried out, and the NEG coat­ing scheme is pro­posed as an more eco­nom­i­cal means to ob­tain ul­tra-high vac­uum. The pro­to­type NEG coat­ing progress is in­tro­duced.  
DOI • reference for this paper ※ doi:10.18429/JACoW-MEDSI2023-THPPP052  
About • Received ※ 02 November 2023 — Revised ※ 10 November 2023 — Accepted ※ 12 November 2023 — Issued ※ 18 July 2024
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