Paper | Title | Page |
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MOPLR025 | Investigation of Low-Level Nitrogen in Niobium by Secondary Ion Mass Spectrometry | 196 |
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Funding: Supported by the U.S. DOE Office of Science, ONP contract DE-AC05-06OR23177 and OHEP grant SC00144475. Tuggle is supported by Nanoscale Characterization and Fabrication Laboratory at Virginia Tech. Understanding the improvement of the SRF cavity quality factor by low-level nitrogen addition ("N-doping") is attracting much attention from researchers. Precise, repeatable measurement of the nitrogen profile in the parts-per-thousand to parts-per-million range is vital. Secondary Ion Mass Spectrometry (SIMS) is the approach of choice because of excellent sensitivity and depth resolution. Accurate quantitation must consider sample properties, such as surface topography and crystal structure, calibration of the instrument with reference materials, and data analysis. We report the results of a SIMS study in which polycrystal and single crystal coupons were N-doped, each accompanied by new SRF-grade niobium sheet equivalent to a single cell cavity. |
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DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-LINAC2016-MOPLR025 | |
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