Author: Shumshurov, A.
Paper Title Page
TUPAB057 Carbon Beam at I-3 Injector for Semiconductor Implantation 1489
 
  • A.A. Losev, P.N. Alekseev, N.N. Alexeev, T. Kulevoy, A.D. Milyachenko, Yu.A. Satov, A. Shumshurov
    ITEP, Moscow, Russia
  • P.B. Lagov
    NUST MISIS, Moscow, Russia
  • M.E. Letovaltseva
    MIREA, Moscow, Russia
  • Y.S. Pavlov
    IPCE RAS, Moscow, Russia
 
  Carbon implantation can be effectively used for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures. When carbon is implanted, more stable recombination centers are formed and silicon is not doped with additional impurities, as for example, when irradiated with protons or helium ions. Economically, such a process competes with alternative methods, and is more efficient for obtaining small lifetimes (several nanoseconds). I-3 ion injector with laser-plasma ion source in Institute for theoretical and experimental physics (ITEP) is used as ion implanter in semiconductors. The ion source uses pulsed CO2 laser setup with radiation-flux density of 1011 W/cm2 at target surface. The ion source produces beams of various ions from solid targets. The generated ion beam is accelerated in the two gap RF resonator at voltage of up to 2 MV per gap. Resulting beam energy is up to 4 MV per charge. Parameters of carbon ion beam generated and used for semiconductor samples irradiation during experiments for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures are presented.  
poster icon Poster TUPAB057 [0.630 MB]  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB057  
About • paper received ※ 15 May 2021       paper accepted ※ 28 May 2021       issue date ※ 01 September 2021  
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