IPAC2021 - List of Authors (Shumshurov, A.)

Paper	Title	Page
TUPAB057	Carbon Beam at I-3 Injector for Semiconductor Implantation	1489
	A.A. Losev, P.N. Alekseev, N.N. Alexeev, T. Kulevoy, A.D. Milyachenko, Yu.A. Satov, A. Shumshurov ITEP, Moscow, Russia P.B. Lagov NUST MISIS, Moscow, Russia M.E. Letovaltseva MIREA, Moscow, Russia Y.S. Pavlov IPCE RAS, Moscow, Russia
	Carbon implantation can be effectively used for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures. When carbon is implanted, more stable recombination centers are formed and silicon is not doped with additional impurities, as for example, when irradiated with protons or helium ions. Economically, such a process competes with alternative methods, and is more efficient for obtaining small lifetimes (several nanoseconds). I-3 ion injector with laser-plasma ion source in Institute for theoretical and experimental physics (ITEP) is used as ion implanter in semiconductors. The ion source uses pulsed CO₂ laser setup with radiation-flux density of 10¹¹ W/cm² at target surface. The ion source produces beams of various ions from solid targets. The generated ion beam is accelerated in the two gap RF resonator at voltage of up to 2 MV per gap. Resulting beam energy is up to 4 MV per charge. Parameters of carbon ion beam generated and used for semiconductor samples irradiation during experiments for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures are presented.
	Poster TUPAB057 [0.630 MB]
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB057
About •	paper received ※ 15 May 2021 paper accepted ※ 28 May 2021 issue date ※ 01 September 2021
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Carbon Beam at I-3 Injector for Semiconductor Implantation

1489

A.A. Losev, P.N. Alekseev, N.N. Alexeev, T. Kulevoy, A.D. Milyachenko, Yu.A. Satov, A. Shumshurov
ITEP, Moscow, Russia
P.B. Lagov
NUST MISIS, Moscow, Russia
M.E. Letovaltseva
MIREA, Moscow, Russia
Y.S. Pavlov
IPCE RAS, Moscow, Russia

Carbon implantation can be effectively used for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures. When carbon is implanted, more stable recombination centers are formed and silicon is not doped with additional impurities, as for example, when irradiated with protons or helium ions. Economically, such a process competes with alternative methods, and is more efficient for obtaining small lifetimes (several nanoseconds). I-3 ion injector with laser-plasma ion source in Institute for theoretical and experimental physics (ITEP) is used as ion implanter in semiconductors. The ion source uses pulsed CO₂ laser setup with radiation-flux density of 10¹¹ W/cm² at target surface. The ion source produces beams of various ions from solid targets. The generated ion beam is accelerated in the two gap RF resonator at voltage of up to 2 MV per gap. Resulting beam energy is up to 4 MV per charge. Parameters of carbon ion beam generated and used for semiconductor samples irradiation during experiments for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures are presented.

Poster TUPAB057 [0.630 MB]

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB057

About •

paper received ※ 15 May 2021 paper accepted ※ 28 May 2021 issue date ※ 01 September 2021

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)