Author: Senaj, V.
Paper Title Page
WEPAB344 Studies for Mitigating Flashover of CERN-LHC Dilution Kicker Magnets 3498
 
  • A.M. Loebner, M.J. Barnes, W. Bartmann, C. Bracco, L. Ducimetière, V. Namora, V. Senaj
    CERN, Geneva 23, Switzerland
 
  The LHC beam dump system is used for extracting beam from the LHC and, as such, is a safety critical system whose proper functionality must be assured. Dilution kicker magnets (MKBs) sweep the extracted beam over the cross-sectional area of a dump block as the energy density would otherwise be too high and damage the block. In 2018, a high voltage flashover occurred in a vertical MKB (MKBV) vacuum tank, during a beam dump, which resulted in non-ideal sweep of the beam over the block. The location of the flashover could not be identified during a subsequent inspection of the magnet. Hence, electrical field simulations have been carried out to identify potentially critical regions, to determine the most probable region of the flashover. One potentially critical region is a rectangular beam pipe (RBP) between the end of the tank and the MKBV magnet, whose purpose is to reduce plasma propagation to the adjacent tank in the event of a flashover. Mitigating measures were studied and are reported in this paper.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-WEPAB344  
About • paper received ※ 16 May 2021       paper accepted ※ 06 July 2021       issue date ※ 22 August 2021  
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THPAB340 Sub-Nanosecond Switching of HV SiC MOS Transistors for Impact Ionisation Triggering 4454
 
  • V. Senaj, T. Kramer, A.A. del Barrio Montañés
    CERN, Geneva 23, Switzerland
  • M. Sack
    KIT, Karlsruhe, Germany
 
  Pulse generators with multi kV/kA pulses are necessary for the particle accelerator environment for beam transfer magnets. Traditionally these generators are using thyratrons - until recently the only switches capable of switching such pulses within tens of ns. There is a strong demand to replace thyratrons with semiconductor switches to avoid their future obsolescence. Very promising candidates are components from the family of fast ionization dynistors triggered by impact ionization. Their sub-nanosecond switching time and extreme current densities can provide performances superior to that of thyratrons. Recent investigations showed that impact ionization triggering is feasible also in cheap industrial thyristors. The main issue is the generation of triggering pulses with slew rates in the multi kV/ns region and with the required output current for charging the parasitic capacitance of the thyristor. We present an approach of generating > 1 kV/ns pulses by ultra-boosted gate driving of HV SiC MOS transistors. We found that the MOS lifetime under these extreme triggering conditions can still reach more than 108 pulses, enough for kicker generator applications.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-THPAB340  
About • paper received ※ 18 May 2021       paper accepted ※ 01 July 2021       issue date ※ 27 August 2021  
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