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@inproceedings{senaj:ipac2021-thpab340,
author = {V. Senaj and T. Kramer and M. Sack and A.A. del Barrio Montañés},
title = {{Sub-Nanosecond Switching of HV SiC MOS Transistors for Impact Ionisation Triggering}},
booktitle = {Proc. IPAC'21},
pages = {4454--4456},
eid = {THPAB340},
language = {english},
keywords = {plasma, kicker, electron, laser, high-voltage},
venue = {Campinas, SP, Brazil},
series = {International Particle Accelerator Conference},
number = {12},
publisher = {JACoW Publishing, Geneva, Switzerland},
month = {08},
year = {2021},
issn = {2673-5490},
isbn = {978-3-95450-214-1},
doi = {10.18429/JACoW-IPAC2021-THPAB340},
url = {https://jacow.org/ipac2021/papers/thpab340.pdf},
note = {https://doi.org/10.18429/JACoW-IPAC2021-THPAB340},
abstract = {{Pulse generators with multi kV/kA pulses are necessary for the particle accelerator environment for beam transfer magnets. Traditionally these generators are using thyratrons - until recently the only switches capable of switching such pulses within tens of ns. There is a strong demand to replace thyratrons with semiconductor switches to avoid their future obsolescence. Very promising candidates are components from the family of fast ionization dynistors triggered by impact ionization. Their sub-nanosecond switching time and extreme current densities can provide performances superior to that of thyratrons. Recent investigations showed that impact ionization triggering is feasible also in cheap industrial thyristors. The main issue is the generation of triggering pulses with slew rates in the multi kV/ns region and with the required output current for charging the parasitic capacitance of the thyristor. We present an approach of generating > 1 kV/ns pulses by ultra-boosted gate driving of HV SiC MOS transistors. We found that the MOS lifetime under these extreme triggering conditions can still reach more than 10⁸ pulses, enough for kicker generator applications.}},
}