IPAC2021 - List of Authors (Sack, M.)

Paper	Title	Page
WEPAB351	Requirements for an Inductive Voltage Adder as Driver for a Kicker Magnet with Short Circuit Termination	3521
	J. Ruf, M.J. Barnes, T. Kramer CERN, Geneva 23, Switzerland M. Sack KIT, Karlsruhe, Germany
	At CERN pulse generators based on Thyratron switches and SF6 gas filled pulse forming lines, used for driving kicker magnets, are to be replaced with semiconductor technology. Preliminary investigations show the inductive voltage adder is suitable as a pulse generator for this application. To increase the magnetic field without raising the system voltage, a short-circuit termination is often applied to a kicker magnet. Because of the electrical length of a transmission line magnet, wave propagation needs to be considered. To allow for the wavefront reflected from the short-circuit termination back to the generator, a novel approach for an inductive adder architecture has been investigated. It is based on a modified generator interface, circulating the current back into the load, until the stored energy is absorbed at the end of the pulse. This approach allows for a smaller magnetic core size compared to a conventional design with a matched load. Moreover, it enables more energy-efficient operation involving smaller storage capacitors. This paper summarizes the conceptual design features and furthermore gives an overview of the parameter space for possible applications at CERN.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-WEPAB351
About •	paper received ※ 18 May 2021 paper accepted ※ 11 June 2021 issue date ※ 17 August 2021
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

THPAB340	Sub-Nanosecond Switching of HV SiC MOS Transistors for Impact Ionisation Triggering	4454
	V. Senaj, T. Kramer, A.A. del Barrio Montañés CERN, Geneva 23, Switzerland M. Sack KIT, Karlsruhe, Germany
	Pulse generators with multi kV/kA pulses are necessary for the particle accelerator environment for beam transfer magnets. Traditionally these generators are using thyratrons - until recently the only switches capable of switching such pulses within tens of ns. There is a strong demand to replace thyratrons with semiconductor switches to avoid their future obsolescence. Very promising candidates are components from the family of fast ionization dynistors triggered by impact ionization. Their sub-nanosecond switching time and extreme current densities can provide performances superior to that of thyratrons. Recent investigations showed that impact ionization triggering is feasible also in cheap industrial thyristors. The main issue is the generation of triggering pulses with slew rates in the multi kV/ns region and with the required output current for charging the parasitic capacitance of the thyristor. We present an approach of generating > 1 kV/ns pulses by ultra-boosted gate driving of HV SiC MOS transistors. We found that the MOS lifetime under these extreme triggering conditions can still reach more than 10⁸ pulses, enough for kicker generator applications.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-THPAB340
About •	paper received ※ 18 May 2021 paper accepted ※ 01 July 2021 issue date ※ 27 August 2021
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Requirements for an Inductive Voltage Adder as Driver for a Kicker Magnet with Short Circuit Termination

3521

J. Ruf, M.J. Barnes, T. Kramer
CERN, Geneva 23, Switzerland
M. Sack
KIT, Karlsruhe, Germany

At CERN pulse generators based on Thyratron switches and SF6 gas filled pulse forming lines, used for driving kicker magnets, are to be replaced with semiconductor technology. Preliminary investigations show the inductive voltage adder is suitable as a pulse generator for this application. To increase the magnetic field without raising the system voltage, a short-circuit termination is often applied to a kicker magnet. Because of the electrical length of a transmission line magnet, wave propagation needs to be considered. To allow for the wavefront reflected from the short-circuit termination back to the generator, a novel approach for an inductive adder architecture has been investigated. It is based on a modified generator interface, circulating the current back into the load, until the stored energy is absorbed at the end of the pulse. This approach allows for a smaller magnetic core size compared to a conventional design with a matched load. Moreover, it enables more energy-efficient operation involving smaller storage capacitors. This paper summarizes the conceptual design features and furthermore gives an overview of the parameter space for possible applications at CERN.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-WEPAB351

About •

paper received ※ 18 May 2021 paper accepted ※ 11 June 2021 issue date ※ 17 August 2021

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

THPAB340

Sub-Nanosecond Switching of HV SiC MOS Transistors for Impact Ionisation Triggering

4454

V. Senaj, T. Kramer, A.A. del Barrio Montañés
CERN, Geneva 23, Switzerland
M. Sack
KIT, Karlsruhe, Germany

Pulse generators with multi kV/kA pulses are necessary for the particle accelerator environment for beam transfer magnets. Traditionally these generators are using thyratrons - until recently the only switches capable of switching such pulses within tens of ns. There is a strong demand to replace thyratrons with semiconductor switches to avoid their future obsolescence. Very promising candidates are components from the family of fast ionization dynistors triggered by impact ionization. Their sub-nanosecond switching time and extreme current densities can provide performances superior to that of thyratrons. Recent investigations showed that impact ionization triggering is feasible also in cheap industrial thyristors. The main issue is the generation of triggering pulses with slew rates in the multi kV/ns region and with the required output current for charging the parasitic capacitance of the thyristor. We present an approach of generating > 1 kV/ns pulses by ultra-boosted gate driving of HV SiC MOS transistors. We found that the MOS lifetime under these extreme triggering conditions can still reach more than 10⁸ pulses, enough for kicker generator applications.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-THPAB340

About •

paper received ※ 18 May 2021 paper accepted ※ 01 July 2021 issue date ※ 27 August 2021

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)