Author: Letovaltseva, M.E.
Paper Title Page
TUPAB057 Carbon Beam at I-3 Injector for Semiconductor Implantation 1489
 
  • A.A. Losev, P.N. Alekseev, N.N. Alexeev, T. Kulevoy, A.D. Milyachenko, Yu.A. Satov, A. Shumshurov
    ITEP, Moscow, Russia
  • P.B. Lagov
    NUST MISIS, Moscow, Russia
  • M.E. Letovaltseva
    MIREA, Moscow, Russia
  • Y.S. Pavlov
    IPCE RAS, Moscow, Russia
  
  Car­bon im­plan­ta­tion can be ef­fec­tively used for axial mi­nor­ity charge car­ri­ers life­time con­trol in var­i­ous sil­i­con bulk and epi­tax­ial pla­nar struc­tures. When car­bon is im­planted, more sta­ble re­com­bi­na­tion cen­ters are formed and sil­i­con is not doped with ad­di­tional im­pu­ri­ties, as for ex­am­ple, when ir­ra­di­ated with pro­tons or he­lium ions. Eco­nom­i­cally, such a process com­petes with al­ter­na­tive meth­ods, and is more ef­fi­cient for ob­tain­ing small life­times (sev­eral nanosec­onds). I-3 ion in­jec­tor with laser-plasma ion source in In­sti­tute for the­o­ret­i­cal and ex­per­i­men­tal physics (ITEP) is used as ion im­planter in semi­con­duc­tors. The ion source uses pulsed CO2 laser setup with ra­di­a­tion-flux den­sity of 1011 W/cm2 at tar­get sur­face. The ion source pro­duces beams of var­i­ous ions from solid tar­gets. The gen­er­ated ion beam is ac­cel­er­ated in the two gap RF res­onator at volt­age of up to 2 MV per gap. Re­sult­ing beam en­ergy is up to 4 MV per charge. Pa­ra­me­ters of car­bon ion beam gen­er­ated and used for semi­con­duc­tor sam­ples ir­ra­di­a­tion dur­ing ex­per­i­ments for axial mi­nor­ity charge car­ri­ers life­time con­trol in var­i­ous sil­i­con bulk and epi­tax­ial pla­nar struc­tures are pre­sented.  
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DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB057  
About • paper received ※ 15 May 2021       paper accepted ※ 28 May 2021       issue date ※ 01 September 2021  
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