Paper | Title | Page |
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THPRB105 | ESS Klystron Production Test Stand | 4074 |
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Diversified Technologies, Inc. (DTI) has delivered a new long-pulse modulator klystron test stand to Communication and Power Industries (CPI) in Palo Alto, CA for full power testing of production VKP-8292A klystrons for the European Spallation Source (ESS). This test stand was built using hardware and designs from an earlier SBIR effort for the US Department of Energy, with modifications to support ESS requirements and klystron testing operation. Earlier versions of this design are in use at IPN Orsay and CEA Saclay in France to test RF components for ESS. This new klystron test stand allows testing of klystrons at the full ESS specifications: 100 kV, 50 A, 3.5 ms pulse, 14 Hz,. This design is based on a (patent pending) non-dissipative regulator that compensates for the capacitor droop voltage (~20%) during the pulse. This allows a much smaller capacitor than would nominally be required for the long ESS pulse, eliminating the need for larger, more expensive capacitor bank. This test stand will speed delivery of ESS klystrons, and similar, long pulse, high power klystrons at CPI. | ||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-THPRB105 | |
About • | paper received ※ 19 May 2019 paper accepted ※ 22 May 2019 issue date ※ 21 June 2019 | |
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THPTS095 | High Efficiency High Power Resonant Cavity Amplifier For PIP-II | 4335 |
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Funding: Work funded under US DOE Grant No. DE-SC0015780 Diversified Technologies, Inc. (DTI) is developing an integrated resonant-cavity combined solid-state amplifier for the Proton Improvement Plan-II (PIP-II) at Fermilab. The prototype has demonstrated multiple-transistor combining at 70% efficiency, at 675 watts per transistor at 650 MHz. The patent pending design simplifies solid-state transmitters to create straightforward scaling to 200 kW and higher high power levels. A crucial innovation is the reliable "soft-failure" mode of operation; a failure in one or more of the transistors has negligible performance impact. This design couples the transistor drains directly to the cavity without first transforming to 50 Ohms, avoiding the circulators, cables, and connectors that would normally be required. Under an ongoing SBIR grant from the US Department of Energy, DTI designed the system to accommodate over 96 transistors in each 50 kW cavity, with minimal RF, DC, and cooling connections. By the end of the SBIR, DTI will build and demonstrate a complete 100 kW-class (~200 kW) transmitter by combining four cavity modules to show the expandability of the design to very high power levels, comparable to large VEDs. |
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DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-THPTS095 | |
About • | paper received ※ 19 May 2019 paper accepted ※ 22 May 2019 issue date ※ 21 June 2019 | |
Export • | reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml) | |