IPAC2017 - List of Keywords (pulsed-power)

Paper	Title	Other Keywords	Page
WEPVA063	Development of a New Pulsed Power Supply with the SiC-MOSFET	power-supply, kicker, flattop, operation	3412
	T. Takayanagi, K. Horino, J. Kamiya, M. Kinsho, T. Ueno, K. Yamamoto JAEA/J-PARC, Tokai-mura, Japan Y. Mushibe, A. Tokuchi Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan
	A new power supply has been developed using linear transformer driver (LTD) technology that adopts SiC-MOSFETs and capacitors without a thyratron switch or a pulse forming network (PFN) device. A new power supply was also designed by connecting the SiC-MOSFETs and the LTD modules in parallel-series. The output voltage and current were 40 kV and 4 kA, respectively with a pulse width of 1500 nsec at a repetition rate of 25 Hz. Furthermore, by adjusting the correction module, to an output voltage per stage of 1/1000, a resolution of the voltage correction of ±0.1 % could be achieved. It was possible to output the current with arbitrary timing by using a trigger input for each LTD module. As a result, fine adjustment of the output voltage waveform was possible within the order of nanoseconds. This new power supply with high voltage output, cur-rent output, and very fast pulse operation is one of the most important key technologies for a kicker system using SiC-MOSFETs. The design and preliminary test results of this prototype power supply are presented here.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPVA063
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THPIK096	Jitter Measurement to 10ppm Level for Pulsed RF Power Amplifiers 3 - 12GHz	operation, timing, hardware, kicker	4314
	C.H. Gough, S. Dordevic, M. Paraliev PSI, Villigen PSI, Switzerland
	Linacs for FEL applications require a low jitter RF path from RF source through pulsed amplifiers, klystron / modulators and cavities. For the SwissFEL project, pulsed solid state power amplifiers of the 500W / 3us class for driving the klystrons were required. For these amplifiers, a stable and reliable interferometer system was developed to measure the residual RF jitter levels to <10 ppm (parts per million) and <10 urad (0.6mdeg) rms. This paper describes the system and gives some measurement results for 3GHz, 5.7GHz and 12GHz amplifiers.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-THPIK096
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Other Keywords

Page

WEPVA063

Development of a New Pulsed Power Supply with the SiC-MOSFET

power-supply, kicker, flattop, operation

3412

T. Takayanagi, K. Horino, J. Kamiya, M. Kinsho, T. Ueno, K. Yamamoto
JAEA/J-PARC, Tokai-mura, Japan
Y. Mushibe, A. Tokuchi
Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan

A new power supply has been developed using linear transformer driver (LTD) technology that adopts SiC-MOSFETs and capacitors without a thyratron switch or a pulse forming network (PFN) device. A new power supply was also designed by connecting the SiC-MOSFETs and the LTD modules in parallel-series. The output voltage and current were 40 kV and 4 kA, respectively with a pulse width of 1500 nsec at a repetition rate of 25 Hz. Furthermore, by adjusting the correction module, to an output voltage per stage of 1/1000, a resolution of the voltage correction of ±0.1 % could be achieved. It was possible to output the current with arbitrary timing by using a trigger input for each LTD module. As a result, fine adjustment of the output voltage waveform was possible within the order of nanoseconds. This new power supply with high voltage output, cur-rent output, and very fast pulse operation is one of the most important key technologies for a kicker system using SiC-MOSFETs. The design and preliminary test results of this prototype power supply are presented here.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPVA063

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

THPIK096

Jitter Measurement to 10ppm Level for Pulsed RF Power Amplifiers 3 - 12GHz

operation, timing, hardware, kicker

4314

C.H. Gough, S. Dordevic, M. Paraliev
PSI, Villigen PSI, Switzerland

Linacs for FEL applications require a low jitter RF path from RF source through pulsed amplifiers, klystron / modulators and cavities. For the SwissFEL project, pulsed solid state power amplifiers of the 500W / 3us class for driving the klystrons were required. For these amplifiers, a stable and reliable interferometer system was developed to measure the residual RF jitter levels to <10 ppm (parts per million) and <10 urad (0.6mdeg) rms. This paper describes the system and gives some measurement results for 3GHz, 5.7GHz and 12GHz amplifiers.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-THPIK096

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)