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TY - CONF AU - Takayanagi, T. AU - Horino, K. AU - Kamiya, J. AU - Kinsho, M. AU - Mushibe, Y. AU - Tokuchi, A. AU - Ueno, T. AU - Yamamoto, K. ED - Schaa, Volker RW ED - Arduini, Gianluigi ED - Pranke, Juliana ED - Seidel, Mike ED - Lindroos, Mats TI - Development of a New Pulsed Power Supply with the SiC-MOSFET J2 - Proc. of IPAC2017, Copenhagen, Denmark, 14â19 May, 2017 C1 - Copenhagen, Denmark T2 - International Particle Accelerator Conference T3 - 8 LA - english AB - A new power supply has been developed using linear transformer driver (LTD) technology that adopts SiC-MOSFETs and capacitors without a thyratron switch or a pulse forming network (PFN) device. A new power supply was also designed by connecting the SiC-MOSFETs and the LTD modules in parallel-series. The output voltage and current were 40 kV and 4 kA, respectively with a pulse width of 1500 nsec at a repetition rate of 25 Hz. Furthermore, by adjusting the correction module, to an output voltage per stage of 1/1000, a resolution of the voltage correction of ±0.1 % could be achieved. It was possible to output the current with arbitrary timing by using a trigger input for each LTD module. As a result, fine adjustment of the output voltage waveform was possible within the order of nanoseconds. This new power supply with high voltage output, cur-rent output, and very fast pulse operation is one of the most important key technologies for a kicker system using SiC-MOSFETs. The design and preliminary test results of this prototype power supply are presented here. PB - JACoW CP - Geneva, Switzerland SP - 3412 EP - 3414 KW - power-supply KW - kicker KW - flattop KW - pulsed-power KW - operation DA - 2017/05 PY - 2017 SN - 978-3-95450-182-3 DO - 10.18429/JACoW-IPAC2017-WEPVA063 UR - http://jacow.org/ipac2017/papers/wepva063.pdf ER -