IPAC2017 - List of Authors (Okamura, K.)

Paper	Title	Page
WEPVA056	Development of an Induction Accelerator Cell Driver Utilizing 3.3 kV SiC-MOSFETs	3388
	K. Okamura, K. Takayama KEK, Ibaraki, Japan K. Takayama Sokendai, Ibaraki, Japan
	A novel synchrotron called an induction synchrotron (IS) was developed at KEK in 2006. In the IS, charged particles are accelerated by pulse voltages driven by switching modulators employing high-speed semiconductor switches. As the switches are turned on and off by gate signals corresponding to the revolution frequency of the ion bunches, switching frequency reaches up to MHz order. The switching power supply (SPS) that generates bipolar pulses is one of the key technologies for the DA. The rating of SPS is roughly 2.5kV-20A-1MHz. To accomplish these requirements, we adopted 7 series connected Si-MOSFET for the switching devices of the 1st generation SPS. However it was too large and complicated for the future practical accelerator driver. Therefore we started to develop the next generation of SPS utilizing silicon carbide (SiC) devices, since they have inherently excellent properties such as high breakdown electric field high drift velocity, and high thermal conductivity. In this paper, we describe the pulse switching test results of a prototype SiC-MOSFET and the test results of the prototype SPS. K. Takayama et al., Phys. Rev. Lett., 98, no.5, pp.054801(1)-054801(4) (2007). **H. Okumura, Japanese J. Appl. Phys. vol.45, no.10A, pp. 7565-7586, Oct. 2006.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPVA056
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Paper

Title

Page

Development of an Induction Accelerator Cell Driver Utilizing 3.3 kV SiC-MOSFETs

3388

K. Okamura, K. Takayama
KEK, Ibaraki, Japan
K. Takayama
Sokendai, Ibaraki, Japan

A novel synchrotron called an induction synchrotron (IS) was developed at KEK in 2006*. In the IS, charged particles are accelerated by pulse voltages driven by switching modulators employing high-speed semiconductor switches. As the switches are turned on and off by gate signals corresponding to the revolution frequency of the ion bunches, switching frequency reaches up to MHz order. The switching power supply (SPS) that generates bipolar pulses is one of the key technologies for the DA. The rating of SPS is roughly 2.5kV-20A-1MHz. To accomplish these requirements, we adopted 7 series connected Si-MOSFET for the switching devices of the 1st generation SPS. However it was too large and complicated for the future practical accelerator driver. Therefore we started to develop the next generation of SPS utilizing silicon carbide (SiC) devices, since they have inherently excellent properties such as high breakdown electric field high drift velocity, and high thermal conductivity**. In this paper, we describe the pulse switching test results of a prototype SiC-MOSFET and the test results of the prototype SPS.
* K. Takayama et al., Phys. Rev. Lett., 98, no.5, pp.054801(1)-054801(4) (2007).
**H. Okumura, Japanese J. Appl. Phys. vol.45, no.10A, pp. 7565-7586, Oct. 2006.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPVA056

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)