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TY - CONF AU - Okamura, K. AU - Takayama, K. ED - Schaa, Volker RW ED - Arduini, Gianluigi ED - Pranke, Juliana ED - Seidel, Mike ED - Lindroos, Mats TI - Development of an Induction Accelerator Cell Driver Utilizing 3.3 kV SiC-MOSFETs J2 - Proc. of IPAC2017, Copenhagen, Denmark, 14â19 May, 2017 C1 - Copenhagen, Denmark T2 - International Particle Accelerator Conference T3 - 8 LA - english AB - A novel synchrotron called an induction synchrotron (IS) was developed at KEK in 2006*. In the IS, charged particles are accelerated by pulse voltages driven by switching modulators employing high-speed semiconductor switches. As the switches are turned on and off by gate signals corresponding to the revolution frequency of the ion bunches, switching frequency reaches up to MHz order. The switching power supply (SPS) that generates bipolar pulses is one of the key technologies for the DA. The rating of SPS is roughly 2.5kV-20A-1MHz. To accomplish these requirements, we adopted 7 series connected Si-MOSFET for the switching devices of the 1st generation SPS. However it was too large and complicated for the future practical accelerator driver. Therefore we started to develop the next generation of SPS utilizing silicon carbide (SiC) devices, since they have inherently excellent properties such as high breakdown electric field high drift velocity, and high thermal conductivity**. In this paper, we describe the pulse switching test results of a prototype SiC-MOSFET and the test results of the prototype SPS. PB - JACoW CP - Geneva, Switzerland SP - 3388 EP - 3390 KW - operation KW - induction KW - power-supply KW - ion KW - synchrotron DA - 2017/05 PY - 2017 SN - 978-3-95450-182-3 DO - 10.18429/JACoW-IPAC2017-WEPVA056 UR - http://jacow.org/ipac2017/papers/wepva056.pdf ER -