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| WEPVA063 |
Development of a New Pulsed Power Supply with the SiC-MOSFET |
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- T. Takayanagi, K. Horino, J. Kamiya, M. Kinsho, T. Ueno, K. Yamamoto
JAEA/J-PARC, Tokai-mura, Japan
- Y. Mushibe, A. Tokuchi
Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan
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A new power supply has been developed using linear transformer driver (LTD) technology that adopts SiC-MOSFETs and capacitors without a thyratron switch or a pulse forming network (PFN) device. A new power supply was also designed by connecting the SiC-MOSFETs and the LTD modules in parallel-series. The output voltage and current were 40 kV and 4 kA, respectively with a pulse width of 1500 nsec at a repetition rate of 25 Hz. Furthermore, by adjusting the correction module, to an output voltage per stage of 1/1000, a resolution of the voltage correction of ±0.1 % could be achieved. It was possible to output the current with arbitrary timing by using a trigger input for each LTD module. As a result, fine adjustment of the output voltage waveform was possible within the order of nanoseconds. This new power supply with high voltage output, cur-rent output, and very fast pulse operation is one of the most important key technologies for a kicker system using SiC-MOSFETs. The design and preliminary test results of this prototype power supply are presented here.
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| DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2017-WEPVA063
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