IPAC2017 - List of Authors (Miyauchi, T.)

Paper	Title	Page
MOPIK011	Electron Beam Generation From InGaN/GaN Superlattice Photocathode	522
	N. Yamamoto KEK, Ibaraki, Japan M. Hosaka, A. Mano, T. Miyauchi, Y. Takashima Nagoya University, Nagoya, Japan M. Katoh UVSOR, Okazaki, Japan
	GaAs-type photocathode (PC) has been used as electron spin polarization (ESP) sources for various applications. Recently, by using a strain-compensated technique for GaAs/GaAsP, the super lattice (SL) thickness of up to 720 nm could be manufactured and the quantum efficiency (QE) improvements with the thickness increases was observed. In the experiments, the ESP degradation was also observed for the thicker thickness samples than 194nm and we considered that electron spin relaxation during diffusion process in the PC caused the degradation. Therefore, we propose developing fcc-GaN based PCs instead of GaAs because a factor of ten longer spin relaxation time compared with GaAs/GaAsP SL was reported. However an fcc-GaN sample with adequate dimensions for PC applications is not available at present due to manufacturing difficulties. Then at the start of GaN-type PC development, an hcp-GaN sample has been studied. In the study, NEA-activation was made for an InGaN/GaN SL sample and QE, surface lifetime and ESP were measured. The QE and ESP values were 1.3% and 2.1% at the pump laser wavelength of 405nm.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-MOPIK011
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Paper

Title

Page

Electron Beam Generation From InGaN/GaN Superlattice Photocathode

522

N. Yamamoto
KEK, Ibaraki, Japan
M. Hosaka, A. Mano, T. Miyauchi, Y. Takashima
Nagoya University, Nagoya, Japan
M. Katoh
UVSOR, Okazaki, Japan

GaAs-type photocathode (PC) has been used as electron spin polarization (ESP) sources for various applications. Recently, by using a strain-compensated technique for GaAs/GaAsP, the super lattice (SL) thickness of up to 720 nm could be manufactured and the quantum efficiency (QE) improvements with the thickness increases was observed. In the experiments, the ESP degradation was also observed for the thicker thickness samples than 194nm and we considered that electron spin relaxation during diffusion process in the PC caused the degradation. Therefore, we propose developing fcc-GaN based PCs instead of GaAs because a factor of ten longer spin relaxation time compared with GaAs/GaAsP SL was reported. However an fcc-GaN sample with adequate dimensions for PC applications is not available at present due to manufacturing difficulties. Then at the start of GaN-type PC development, an hcp-GaN sample has been studied. In the study, NEA-activation was made for an InGaN/GaN SL sample and QE, surface lifetime and ESP were measured. The QE and ESP values were 1.3% and 2.1% at the pump laser wavelength of 405nm.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-MOPIK011

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)