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TY - CONF AU - Yamamoto, N. AU - Hosaka, M. AU - Katoh, M. AU - Mano, A. AU - Miyauchi, T. AU - Takashima, Y. ED - Schaa, Volker RW ED - Arduini, Gianluigi ED - Pranke, Juliana ED - Seidel, Mike ED - Lindroos, Mats TI - Electron Beam Generation From InGaN/GaN Superlattice Photocathode J2 - Proc. of IPAC2017, Copenhagen, Denmark, 14â19 May, 2017 C1 - Copenhagen, Denmark T2 - International Particle Accelerator Conference T3 - 8 LA - english AB - GaAs-type photocathode (PC) has been used as electron spin polarization (ESP) sources for various applications. Recently, by using a strain-compensated technique for GaAs/GaAsP, the super lattice (SL) thickness of up to 720 nm could be manufactured and the quantum efficiency (QE) improvements with the thickness increases was observed. In the experiments, the ESP degradation was also observed for the thicker thickness samples than 194nm and we considered that electron spin relaxation during diffusion process in the PC caused the degradation. Therefore, we propose developing fcc-GaN based PCs instead of GaAs because a factor of ten longer spin relaxation time compared with GaAs/GaAsP SL was reported. However an fcc-GaN sample with adequate dimensions for PC applications is not available at present due to manufacturing difficulties. Then at the start of GaN-type PC development, an hcp-GaN sample has been studied. In the study, NEA-activation was made for an InGaN/GaN SL sample and QE, surface lifetime and ESP were measured. The QE and ESP values were 1.3% and 2.1% at the pump laser wavelength of 405nm. PB - JACoW CP - Geneva, Switzerland SP - 522 EP - 524 KW - electron KW - laser KW - polarization KW - gun KW - brightness DA - 2017/05 PY - 2017 SN - 978-3-95450-182-3 DO - 10.18429/JACoW-IPAC2017-MOPIK011 UR - http://jacow.org/ipac2017/papers/mopik011.pdf ER -