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| THPIK068 |
High Power Test of SINAP X-Band Deflector at KEK |
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- J.H. Tan, W. Fang, Q. Gu, X.X. Huang, Z.B. Li, Z.T. Zhao
SINAP, Shanghai, People's Republic of China
- T. Higo
KEK, Ibaraki, Japan
- D.C. Tong
TUB, Beijing, People's Republic of China
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A crucial RF structure used for bunch length measurement for Shanghai X-ray Free Electron Lasers (SXFEL) at the Shanghai Institute of Applied Physics (SINAP), Chinese Academy of Science [1]. The design, fabrication, measurement and tuning have been completed at SINAP [2], and the high power test was carried out at Nextef of KEK with international collaboration. This paper presents the RF conditioning process and test results.
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| DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2017-THPIK068
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