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TY - CONF AU - Tan, J.H. AU - Fang, W. AU - Gu, Q. AU - Higo, T. AU - Huang, X.X. AU - Li, Z.B. AU - Tong, D.C. AU - Zhao, Z.T. ED - Schaa, Volker RW ED - Arduini, Gianluigi ED - Pranke, Juliana ED - Seidel, Mike ED - Lindroos, Mats TI - High Power Test of SINAP X-Band Deflector at KEK J2 - Proc. of IPAC2017, Copenhagen, Denmark, 14â19 May, 2017 C1 - Copenhagen, Denmark T2 - International Particle Accelerator Conference T3 - 8 LA - english AB - A crucial RF structure used for bunch length measurement for Shanghai X-ray Free Electron Lasers (SXFEL) at the Shanghai Institute of Applied Physics (SINAP), Chinese Academy of Science [1]. The design, fabrication, measurement and tuning have been completed at SINAP [2], and the high power test was carried out at Nextef of KEK with international collaboration. This paper presents the RF conditioning process and test results. PB - JACoW CP - Geneva, Switzerland SP - 4251 EP - 4253 KW - cavity KW - electron KW - impedance KW - operation KW - laser DA - 2017/05 PY - 2017 SN - 978-3-95450-182-3 DO - 10.18429/JACoW-IPAC2017-THPIK068 UR - http://jacow.org/ipac2017/papers/thpik068.pdf ER -