Author: Eggert, T.
Paper Title Page
TUPAB032 Development of a Cryogenic GaAs DC Photo-Gun for High-Current Applications 1391
 
  • S. Weih, T. Eggert, J. Enders, M. Espig, Y. Fritzsche, N. Kurichiyanil, M. Wagner
    TU Darmstadt, Darmstadt, Germany
 
  Funding: Work supported by DFG (GRK 2128) and BMBF (05H15RDRB1)
For high-current applications of GaAs photocathodes it is necessary to maximize the charge lifetime of the cathode material to ensure reliable operation. By means of cryogenic cooling of the electrode, the local vacuum conditions around the source can be improved due to cryogenic adsorption of reactive rest-gas molecules at the surrounding walls. Furthermore, the cooling also allows a higher laser power deposited in the material, resulting in higher currents that can be extracted from the cathode. Ion-backbombardment is expected to be reduced using electrostatic bending of the electrons behind the cathode. To measure the characteristics of such an electron source, a dedicated set-up is being developed at the Photo-CATCH test facility in Darmstadt.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-TUPAB032  
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