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RIS citation export for TUPAB032: Development of a Cryogenic GaAs DC Photo-Gun for High-Current Applications

TY - CONF
AU - Weih, S.
AU - Eggert, T.
AU - Enders, J.
AU - Espig, M.
AU - Fritzsche, Y.
AU - Kurichiyanil, N.
AU - Wagner, M.
ED - Schaa, Volker RW
ED - Arduini, Gianluigi
ED - Pranke, Juliana
ED - Seidel, Mike
ED - Lindroos, Mats
TI - Development of a Cryogenic GaAs DC Photo-Gun for High-Current Applications
J2 - Proc. of IPAC2017, Copenhagen, Denmark, 14–19 May, 2017
C1 - Copenhagen, Denmark
T2 - International Particle Accelerator Conference
T3 - 8
LA - english
AB - For high-current applications of GaAs photocathodes it is necessary to maximize the charge lifetime of the cathode material to ensure reliable operation. By means of cryogenic cooling of the electrode, the local vacuum conditions around the source can be improved due to cryogenic adsorption of reactive rest-gas molecules at the surrounding walls. Furthermore, the cooling also allows a higher laser power deposited in the material, resulting in higher currents that can be extracted from the cathode. Ion-backbombardment is expected to be reduced using electrostatic bending of the electrons behind the cathode. To measure the characteristics of such an electron source, a dedicated set-up is being developed at the Photo-CATCH test facility in Darmstadt.
PB - JACoW
CP - Geneva, Switzerland
SP - 1391
EP - 1392
KW - electron
KW - cathode
KW - cryogenics
KW - vacuum
KW - ion
DA - 2017/05
PY - 2017
SN - 978-3-95450-182-3
DO - 10.18429/JACoW-IPAC2017-TUPAB032
UR - http://jacow.org/ipac2017/papers/tupab032.pdf
ER -